Acquisition of a Variable-Temperature Scanning Tunneling Microscope Facility for Electronic Material and Nano- Device Design

一个变温扫描隧道显微镜（STM）与研究电子材料设计的化学及其在纳米器件制造中的应用的能力将获得与学术研究基础设施计划的资金。 JEOL STM仪器将在30K和1500K之间运行。 该研究将强调涉及硅烷和氯硅烷的沉积和生长反应，以阐明生长前体产生的氢和氯原子的作用。这种变温能力将在吸附、扩散和生长反应的研究中发挥重要作用。原子氢在电子材料中促进有序晶体生长的催化作用。 各种方法将被认为是在努力制造可控掺杂的二极管纳米结构和量子点。 变温扫描隧道显微镜将用于研究电子材料的化学设计及其在纳米器件制造中的应用。将研究原子氢和氯在生长过程中的作用。将对温度进行吸附、扩散和生长反应研究。将努力制造纳米器件。

A variable-temperature scanning tunneling microscope (STM) with the capability of studying the chemistry of electronic material design and its application to nano-device fabrication will be acquired with the Academic Research Infrastructure Program funds. The JEOL STM instrument will operate between 30K and 1500K. The research will emphasize deposition and growth reactions involving silanes and chlorosilanes in an effort to elucidate the role of hydrogen and chlorine atoms produced by the growth precursors. The variable-temperature capability will play an important role in the study of adsorption, diffusion and growth reactions. The catalytic role of atomic hydrogen in promoting ordered crystalline growth in electronic materials. Various approaches will be considered in efforts to fabricate controllably doped diode nanostructures and quantum dots. A variable-temperature scanning tunneling microscope will be utilized in the study of the chemistry of electronic material design and its application to nanoscale device fabrication. The role of atomic hydrogen and chlorine in the growth processes will be studied. Adsorption, diffusion, and growth reaction studies will be carried out versus temperature. Efforts will be made to fabricate nanoscale devices.