Laundau Level Semiconductor Lasers for the Millimeter- Submillimeter Region

9414450科尔曼，这项提议的目标是研究和开发基于陆军研究实验室感兴趣的半导体朗道水平的高功率和低功率连续可调毫米波和亚毫米波激光器。最初的研究将是在脉冲E场和DC B场激励下的块体半导体材料(即Ge、GaAs)，其中E.B=0。在E、B场分别为1~2千伏/厘米和0.5~2.0特斯拉的PGE中，产生了10~120 cm~(-1)的激光信号。具体目标是通过使用分子激光器提供的大量信号来使用激发态光谱来了解激光动力学和激光周期。1-2%的激光效率很容易在困难的光谱范围内产生千瓦的脉冲功率。对于低功率应用，我们将研究异质结中的朗道能级。100 GHz以上的实用源很难实现，这使得开发毫米-亚毫米区域变得困难。这项研究的目的是为这一发展做出贡献。亚毫米范围是从微波到光学技术的过渡领域，因此为研究生提供了场论、量子电子学、半导体、光学、光谱学和材料特性方面的广泛教育。***

9414450 Coleman The objectives of this proposal are to study and develop high and low power continuously tunable millimeter and submillimeter wave lasers based upon Landau levels in semiconductors that are of interest to the Army Research Laboratory. The initial study will be on bulk semiconductor materials (i.e., Ge,GaAs), excited by pulsed E field and dc B fields where E.B = 0. Numerous laser signals in the range 10-120cm-1 have been generated in pGe with E and B fields in the range 1-2 kV/cm and 0.5-2.0 tesla. Specific objectives are to understand the laser dynamics and laser cycle by employing excited state spectroscopy using the numerous signals available from molecular lasers. Laser efficiencies of 1-2% could readily yield kilowatts of pulsed power in a difficult range of the spectrum. For low power applications, Landau levels in heterostructures will be investigated. Practical sources above 100 GHz are difficult to achieve which makes it difficult to develop the millimeter-submillimeter region. The aim of this study is to contribute to this development. The submillimeter range is a transition region from microwave to optical techniques and as such offers the graduate student a broad education in field theory, quantum electronics, semiconductors, optics, spectroscopy and material properties. ***