Thermal Plasma Diamond Deposition: Film Quality and Morphology Under High-Growth Rate Conditions

格尔希克CTS-9424271指出，化学气相沉积金刚石商业化的一个关键问题是在高生长速率条件下进行形态控制。该建议通过考虑以下目标来解决这一关键问题：(1)将金刚石生长速率和形貌参数a与射频热等离子体反应器中的工艺条件相关联；(2)将金刚石生长速率和形貌参数a与薄膜生长过程中的实际表面条件，即物种浓度和表面温度相关联；(3)将薄膜质量与表面条件、生长速率和形貌相关联；(4)评估以高生长速率生长光滑的100织构薄膜的可行性。PI计划通过结合钻石生长实验来实现这些研究目标，这些实验包括在线诊断温度和物种浓度，以及离线诊断以分析沉积的薄膜，并进行数值模拟。这些实验将利用一个反应堆，在这个反应堆中，射频等离子体通过喷嘴加速，产生薄的边界层，这是众所周知的，可以促进高增长率。实验参数包括氢气、甲烷和Ar的流量、衬底表面温度、喷嘴出口直径和燃烧室压力。诊断将包括通过位于衬底上的微孔获得的气体样品的气相色谱和质谱学，以及发射光谱和激光诱导荧光的非侵入性技术。以前存在的处理射频等离子体、衬底边界层中的化学动力学和钻石表面的薄膜生长化学的代码将进行修改，以适应新的反应堆设计。

Abstract Girshick CTS-9424271 The PI points out that a crucial issue in the commercialization of CVD diamond lies in the development of morphology control under high growth rate conditions. This proposal addresses this key issue by considering the following objectives: (1) To relate diamond growth rates and the morphology parameter a to process conditions in an rf thermal plasma reactor; (2) To relate a to actual surface conditions during film growth, i.e. , species concentrations and surface temperature; (3) To relate film quality to surface conditions, growth rates and morphology; (4) To assess the feasibility of growing smooth 100-textured films at high growth rates. The PI plans to attain these research objectives through a combination of diamond growth experiments involving on-line diagnostics for temperature and species concentrations, and off-line diagnostics to analyze the deposited films and by carrying out numerical modeling. The experiments will make use of a reactor in which an rf plasma is accelerated through a nozzle to produce thin boundary layers, which are known to promote high growth rates. The experimental parameters to be varied include the flow rates of hydrogen, methane and argon, the substrate surface temperature, the nozzle exit diameter, and chamber pressure. Diagnostics will include gas chromatography and mass spectroscopy of gaseous samples obtained through micro-orifices located in the substrate, and non-intrusive techniques of emission spectroscopy and laser induced fluorescence. A previously existing code which treats the rf plasma, the chemical kinetics in the substrate boundary layer, and the film growth chemistry at the diamond surface will be modified to account for the new reactor design.