Pressure and Stress Effects on Atomic Transport in Silicon and Germanium

本研究项目旨在了解与成核和外延生长相关的固相过程，并采用高压方法研究半导体中的原子扩散和非流体静力应力对固相外延生长过程的影响。研究的主题是利用高压作为热力学参数，以获得晶体生长或扩散过程的激活体积信息。基本方法是测量生长速率或杂质扩散速率作为压力的函数，并利用该信息获得该工艺的活化体积。活化体积的大小和符号限制了用来描述生长或扩散过程的物理模型。本研究项目的主要目标是对两种关键电子材料硅和锗的薄膜合成和加工相关的特定现象建立更大的基本理解，并通过修改加工方法将这种理解与先进微电子器件的发展联系起来。此外，该计划的一个重要特点是在一个基础和技术上重要的领域培养研究生和本科生。从这个研究项目中获得的知识和理解预计将有助于提高用于计算、信息处理和电信的先进设备的性能。＊＊＊

9525907 Aziz This research project aims for fundamental understanding of solid phase processes related to nucleation and epitaxial growth, and pursues this goal using a high pressure methodology for studying atomic diffusion in semiconductors and the effects of non-hydrostatic stresses on solid phase epitaxial growth processes. The theme of the research is to use high pressure as a thermodynamic parameter in order to obtain information on the activation volume of crystal growth or diffusion processes. The basic approach is to measure a growth rate or impurity diffusion rate as a function of pressure and to use this information to obtain the activation volume for the process. The magnitude and sign of the activation volume provide constraints on the physical models used to describe growth or diffusion processes. %%% The primary goal of this research project is to establish greater basic understanding of particular phenomena relevant to thin film synthesis and processing of two key electronic materials, silicon and germanium, and to relate this understanding to the development of advanced microelectronics devices through modifications in processing methods. Additionally, an important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area. The knowledge and understanding gained from this research project is expected to contribute generally to improving the performance of advanced devices used in computing, information processing, and telecommunications. ***