课题基金 / 基金详情

NSF-CGP Fellowship: An In situ Scanning Tunneling Micro- scopy Study of Group III Nitride Thin Films

NSF-CGP Fellowship: An In situ Scanning Tunneling Micro- scopy Study of Group III Nitride Thin Films
NSF-CGP 奖学金:III 族氮化物薄膜的原位扫描隧道显微镜研究
批准号:
9602468
负责人:
Ignatius Tsong
金额:
$12.99万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1997
资助国家:
美国
项目状态:
已结题
起止时间:
1997-03-15 至 1999-05-31

项目摘要

项目成果

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中文摘要
翻译
9602468 Tsong该奖项支持美国亚利桑那州立大学物理系的Ignatius S. T. Tsong博士和日本仙台东北大学材料研究所的Toshio Sakurai博士之间的美日合作研究。Tsong博士将在东北大学工作12个月,对分子束外延(MBE)生长的氮化物薄膜进行原位扫描隧道显微镜(STM)研究。研究人员将尝试确定最佳生长温度和最合适的氮通量物种,以获得高质量的MBE薄膜。访问期间获得的结果将与在亚利桑那州立大学研究人员实验室中使用种子超音速光束进行氮化物生长的低能电子显微镜(LEEM)研究相关联。这位美国研究人员为这次合作带来了他在几何和缺陷结构、原子组成以及金属、合金和半导体表面吸附动力学方面的知识。这与日本研究人员在STM领域具有专门知识的类似知识相辅相成。他的实验室配备了最先进的仪器,他的MBE- STM系统是世界上为数不多的此类仪器之一。该项目有望为获得与外延生长相关的基础材料科学现象以及具有高技术和经济意义的电子/光子一类材料的其他相关加工现象的新的和更深入的理解提供具有关键价值的新信息。预计这些实验室之间的合作将促进未来的合作。***
英文摘要
9602468 Tsong This award supports U.S.-Japan collaborative research between Dr. Ignatius S. T. Tsong of the Department of Physics at Arizona State University and Dr. Toshio Sakurai of the Institute of Materials Research at Tohoku University in Sendai, Japan. Dr. Tsong will be spending twelve months at Tohoku University to conduct an in situ scanning tunneling microscopy (STM) study of nitride thin films grown by molecular beam epitaxy (MBE). The researchers will attempt to identify the optimum growth temperature and the most suitable nitrogen flux species for high quality MBE film growth. The results obtained during the visit will be correlated with the low-energy electron microscopy (LEEM) study of nitride growth with seeded supersonic beams in the researcher's laboratory at Arizona State University. The U.S. researcher brings to this collaboration his knowledge of geometric and defect structures, atomic composition, and adsorbate kinetics on the surfaces of metals, alloys and semiconductors. This is complemented by similar knowledge of the Japanese researcher who has specific expertise in the area of STM. His laboratory is equipped with state-of-the-art instrumentation and his MBE- STM system is one of only a handful of such instruments in the world. The project is expected to provide new information of critical value to gaining new and deeper understanding of fundamental materials science phenomena associated with the epitaxial growth as well as other related processing phenomena in a class of materials, electronic/photonic, having high technological and economic significance. It is expected that the cooperation between these laboratories should foster future collaborations. ***
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Gallium Nitride Quantum-Dot Light-Emitting Diodes
  • 批准号:
    0438400
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $60.0万
  • 财政年份:
    2006
  • 负责人:
    Ignatius Tsong
  • 依托单位:
Properties of the Pseudo-Binary Wide Band Gap Semiconductor Silicon Carbide-Aluminum Nitride
  • 批准号:
    0303237
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $33.63万
  • 财政年份:
    2003
  • 负责人:
    Ignatius Tsong
  • 依托单位:
Tailoring Surface Morphology in Group III Nitride Heteroepitaxy
  • 批准号:
    9986271
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $30.68万
  • 财政年份:
    2000
  • 负责人:
    Ignatius Tsong
  • 依托单位:
U.S.-Japan Joint Seminar: Mesoscopic Phenomena on Surfaces
  • 批准号:
    9909756
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.44万
  • 财政年份:
    2000
  • 负责人:
    Ignatius Tsong
  • 依托单位:
国内基金
海外基金
棉花色素腺体相关CRISPR突变体库的构建及CGP基因调控腺体发育和功能的分子机制
  • 批准号:
    32172041
  • 项目类别:
    面上项目
  • 资助金额:
    58万元
  • 批准年份:
    2021
  • 负责人:
    高巍
  • 依托单位:
cGP/IGF-1 调控 T2DM 发生发展机制的研究
  • 批准号:
  • 项目类别:
    省市级项目
  • 资助金额:
    3.0万元
  • 批准年份:
    2019
  • 负责人:
  • 依托单位:
    --