Electronic Properties and Growth of Novel InSb Based Quantum Wells

9624699桑托斯本研究项目旨在促进InSb/AlInSb异质外延材料科学的发展，并探索限制在InSb量子阱中的二维电子系统的性质。InSb的极端性质--小能隙、高本征电子迁移率、小电子有效质量、大g因子和非抛物线导带--有望在低温下导致InSb量子阱中电子的新型磁光和磁输运行为。将继续在InSb衬底上进行全应变异质结的分子束外延生长，并优化生长条件，以获得比使用GaAs衬底更高的晶体质量；还将研究生长条件，以获得高质量的InSb/AlInSb异质结。远红外激光光谱学将被用来评估非抛物性对电子限制的影响。通过结合磁光和磁输运测量的结果，还将解决InSb/AlInSb异质结中的导带和价带偏移问题。我们将利用改变量子阱宽度、势垒成分和应变的自由来研究自旋分裂的机制。由于在这些材料组合中预期的低无序性，预计将有一个不同寻常的机会来探索窄禁带半导体中电子关联效应的可能性。这项研究将在与先进电子、光子和磁性设备以及集成电路的几个方面相关的基础技术层面上贡献基本的材料科学知识。此外，从这项研究项目中获得的知识和理解有望通过为设计和生产改进的材料提供基本的理解和基础，从而在总体上为提高先进器件和电路的性能做出贡献。该计划的一个重要特点是，通过在一个具有重大意义的基金和技术领域对学生进行培训，将研究和教育结合起来。***

9624699 Santos This research project aims to advance the materials science of InSb/AlInSb heteroepitaxy, and to explore the properties of two-dimensional electron systems confined within InSb quantum wells. The extreme properties of InSb--small energy gap, high intrinsic electron mobility, small electron effective mass, large g-factor, and non-parabolic conduction band--are expected to lead to novel magneto-optical and magnetotransport behavior of electrons in InSb quantum wells at low temperatures. MBE growth of fully strained heterostructures on InSb substrates will be pursued and growth conditions optimized to achieve higher crystal quality than obtainable with GaAs substrates; growth conditions will also be studied to achieve high quality InSb/AlInSb heterostructures. Far IR laser spectroscopy will be used to assess effects of non-parabolicity on electron confinement. By combining results of magneto-optical and magneto-transport measurements, the conduction and valence band offsets in InSb/AlInSb heterojunctions will also be addressed. The freedom to change quantum well width, barrier composition, and strain will be employed to study mechanisms of spin splitting. Because of the low disorder anticipated in these materials combinations there is expected to be an unusual opportunity to explore the possibility of electron correlation effects in narrow-gap semiconductors. %%% The research will contribute basic materials science knowledge at a fundamental level of technological relevance to several aspects of advanced electronic, photonic and magnetic devices and integrated circuitry. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials. An important feature of the program is the integration of research and education through the training of students in a fund amentally and technologically significant area. ***