GOALI: Defect Structure of Epitaxial Wide Gap III-V Semiconductors

9705134 Wessels这项目标提案解决了宽禁带III-V氮化物半导体中掺杂引起的缺陷。正在研究的问题包括高电导材料中缺陷的结构和特性，补偿受主和施主缺陷的结构和特性，它们的浓度，以及它们的稳定性。大气压MOVPE和流动调制外延的研究都是该项目的组成部分。联合协作活动包括与朗讯、摩托罗拉和Emcore的研究生进行员工交流。拟议的研究强调对基本机制和过程的理解，以及电子/光子材料和器件技术的一些实际方面。该项目解决了材料科学中具有高度技术相关性的热门领域中的前沿材料科学研究问题。这项研究将在基础水平上为电子/光子器件和集成电路的重要方面贡献基本的材料科学知识。此外，从研究中获得的基本知识和理解有望为设计和生产改进的材料提供基本的理解和基础，从而有助于提高先进器件和电路的性能。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。***

9705134 Wessels This GOALI proposal addresses doping induced defects in wide bandgap III-V nitride semiconductors. Issues being investigated include the structure and identity of defects in high conductivity materials, the structure and identity of compensating acceptor and donor defects, their concentration, and their stability. Studies of both atmospheric pressure MOVPE and flow modulation epitaxy are an integral part of the project. Joint collaborative activities include staff exchange with graduate students spending time at Lucent, Motorola, and Emcore. The proposed research emphasizes understanding of fundamental mechanisms and processes along with some practical aspects of electronic/photonic materials and device technology. %%% The project addresses forefront materials science research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices and integrated circuitry, in general. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***