LT: Removal of Organic Films and Contaminants from Surfaces Using Elevated Pressure, Elevated Temperature Water

9727249赫斯全球半导体市场目前超过1300亿美元。这项技术的持续增长是因为在过去的35年里，微电子设备和集成电路(IC)的复杂性和能力大大增加，而每个IC芯片的成本基本上没有增加。这些器件的成品率和可靠性主要取决于在制造过程中避免有害杂质(如有机污染物、碱性离子和金属原子/离子)进入器件的能力。因此，这种快速变化的技术的竞争力和市场份额取决于清洁方法。未来的设备结构和尺寸需要对传统的液体清洗步骤进行修改。此外，当前清洗技术中使用的溶剂、酸和大量去离子水的处理是一个重大的环境问题。拟议的研究重点是开发一种新的表面清洁和调节方法，以确保这一关键制造步骤与制造过程中的真空顺序兼容。通过将液态水的压力提高到100摄氏度左右，可以保持液体清洗的优势；降低压力会导致水蒸发，从而允许随后将基材转移到真空室中。在高压和高温条件下向水中添加二氧化碳可以增强水对有机物质的反应能力，从而提供了一种去除有机和无机污染物的方法。此外，这种新的清洁方法将制造IC所需的多次清洁周期中使用的溶剂、酸和去离子水的数量降至最低，从而大大减少了IC制造对环境的影响。对故意污染有机层并随后进行清洁的硅和二氧化硅表面进行化学和物理表征，将使用X射线光电子能谱(通过从分析系统中的高压反应堆进行原位转移)、原位傅里叶变换红外光谱、电感耦合质谱仪(ICPMS)、原子力显微镜和接触角测量。这些结果将为使用有无添加剂的水来清洁有机污染物的基本机理提供洞察力。初步的电气测量，结合电感耦合等离子体质谱，将产生有关这项清洁技术的最终用途的信息。***

9727249 Hess The worldwide semiconductor market currently exceeds one hundred thirty billion dollars. Continued growth of this technology has occurred because the complexity and hence the capability of microelectronic devices and integrated circuits (ICs) has increased tremendously over the past 3 5 years with essentially no increase in cost per IC chip. Yield and reliability of these devices are determined primarily by the ability to avoid the incorporation of deleterious impurities such as organic contaminants, alkali ions and metal atoms/ions into the device during fabrication processes. Competitiveness and market share in this rapidly changing technology therefore depend on cleaning methodology. Future device structures and dimensions require modifications to the traditional liquid cleaning steps. In addition, disposal of solvents, acids, and large volumes of de-ionized water used in current cleaning techniques is a significant environmental concern. The proposed research focuses on the development of a novel approach to surface cleaning and conditioning that ensures compatibility of this critical fabrication step with vacuum sequences in the manufacturing process. By increasing the pressure of liquid water in the vicinity of 100C, the advantages of liquid cleaning can be maintained; a reduction in pressure results in water evaporation, permitting subsequent transfer of substrates into a vacuum chamber. The addition of C02 to water under elevated pressure and elevated temperature conditions enhances water reactivity to organic materials, and thus provides a means to remove organic as well as inorganic contaminants. Furthermore, this new cleaning approach minimizes the volumes of solvents, acids, and de-ionized water used in the numerous cleaning cycles required in the fabrication of ICs, thereby reducing greatly the environmental impact of IC manufacture. Chemical and physical characterization of silicon and silicon dioxide surfaces, intentional ly contaminated with organic layers and subsequently cleaned, will be performed by X-ray Photoelectron Spectroscopy (via in-situ transfer from the high pressure reactor in the analysis system), in- situ Fourier Transform Infrared Spectroscopy, Inductively- Coupled Mass Spectrometry (ICP-MS), atomic force microscopy and contact angle measurements. These results will provide insight into fundamental cleaning mechanisms of organic contaminants using water with and without additives. Preliminary electrical measurements, combined with ICP-MS, will generate information concerning the ultimate utility of this cleaning technique. ***