Ion Implantation Doping Isolation of III-Nitrides

这个项目将通过离子注入和高温退火来研究氮化镓和相关合金的n型和p型掺杂，以更好地理解氮化镓和相关材料的掺杂。研究活动包括几个主要课题的研究：(i)利用Mg/O或Be/O共注入实现GaN和AlGaN的高（10E18cm-3） p型掺杂。通过改变每个共植入物种的剂量，现有理论将得到检验，并通过比较其与其他物种的作用来确定O的作用；共植入物包括N、Ar或f。（ii）不同受体掺杂剂的比较：发现Ca与Mg具有相似的电离水平，即~170meV。将Zn、Cd、Be和C、Ge、Sn与III族共注入，以评估它们作为受体的功能。（iii）不同供体掺杂剂的比较；第六族物质S、Se和Te在GaN中的掺杂性质尚未确定。（四）采用超高退火温度实现更高的活化效率。初步数据表明，在1500℃退火时可以获得更高的掺杂量。在这些温度下的主要问题是氮化镓表面的保存-将研究各种氮化镓沉积方法作为解决方案。(v)研究新的植入隔离物质，如v、Fe或Co，它们可能在GaN中产生热稳定的深能级，并可应用于生产器件隔离。这项工作的意义在于对氮化镓和相关材料的掺杂有更全面的了解，为开发先进器件的选择性区域植入提供材料科学基础。该项目涉及具有高技术相关性的材料科学主题领域的基础研究问题。该研究将在基础层面上为电子/光子器件的重要方面贡献基础材料科学知识。从研究中获得的基本知识和理解有望通过为设计和生产改进的材料和材料组合提供基本的理解和基础，从而有助于提高先进器件和电路的性能和稳定性。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。* * *

9732865 Pearton This project will investigate n- and p-type doping of GaN and related alloys by ion implantation and high temperature annealing to achieve greater understanding of doping in GaN and related materials. Research activities include study of several major topics: (i) use of Mg/O or Be/O co-implantation to achieve high (10E18cm-3) p-type doping of GaN and AlGaN. By varying the doses of each co-implanted species existing theory will be tested, and the role of O established by comparing its effect to that of other species; co-implant species include N, Ar or F. (ii) comparison of different acceptor dopants: Ca was found to have a similar ionization level to that of Mg, i.e., ~170meV. Zn, Cd, Be will be implanted, and C, Ge and Sn will be co- implanted with group III species to assess their functionality as acceptors. (iii) comparison of different donor dopants; the doping properties of the group VI species, S, Se and Te are, as yet, not established in GaN. (iv) use of ultra-high annealing temperatures to achieve higher activation efficiency. Preliminary data indicate higher doping can be achieved for annealing at 1500 C. The major problem at these temperatures is preservation of the GaN surfaces - various methods of AlN deposition will be investigated as a solution. (v) investigation of new implant isolation species, such as V, Fe or Co, which might create thermally stable deep levels in GaN and have application to produce device isolation. The significance of this work will be the development of a more complete understanding of doping in GaN and related materials providing a materials science basis for selective area implantation in the development of advanced devices. %%% The project addresses basic research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices. The basic knowled ge and understanding gained from the research is expected to contribute to improving the performance and stability of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***