Development of Si Light Emitting Devices for Enabling Optical Interconnect Technology in Si Integrated Circuits

9802270 Iliadis提出了一种新型Si发光器件的开发[I]，该器件与CMOS技术和工艺完全兼容，并在标准模拟/数字偏置条件下提供光发射。 该器件采用了与标准正向偏置p-n结发光复合工艺不同的方法，本方案旨在探索器件的发展，并在此发展过程中，更好地理解发光机理。对于该技术的发展，将制作平面p-n结二极管和微米和亚微米IC MOSFET阵列，并且将执行浅偏振以限定光学有效区域。 将进行电气和光学评估，以检查器件的最终性能，并了解发光过程的关键参数。 将采用俄歇和西姆斯分析来确定注入轮廓并与观察到的特性相关联。注入将通过标准宽区域注入器和马里兰州大学聚焦离子束设施的聚焦离子束注入器（FIB）进行。 微米MOSFET器件的加工、电气（参数、DLTS）和光学（发光光谱和晶片成像）评估也将在马里兰州大学进行。 Sumbicron处理和Auger/西姆斯分析将通过正在进行的合作计划在美国陆军研究实验室（Adelphi，MD）完成，本提案不承担任何费用。这种发光器件的开发将对开发可行的完全CMOS兼容的Si OEIC技术产生重大影响，该技术具有用于片上引导和自由空间光学处理和传输的光学互连。*

9802270IliadisThe development of a novel light-emitting device in Si is proposed [I], which is fully compatible with CMOS technology and processing, and provides light emission under standard analog/digital biasing conditions. The device uses a different approach to the standard forward biased p-n junction light emission recombination processes, and this proposal seeks to explore the development of the device and in the process of this development, understand better the mechanisms of light emission.For the development of this technology, planar p-n junction diodes and micron and submicron IC MOSFET arrays will be fabricated, and shallow implantations will be performed to define the optically active areas. Electrical and optical evaluation will be performed to examine the resultant properties of the device and develop an understanding of the parameters critical to the light emission processes. Auger and SIMS analysis will be employed to define the implant profiles and correlate with observed properties.Implantations will be performed by a standard broad area implanter and by a focused ion beam implanter (FIBI) at the University of Maryland Focused Ion Beam facility. Processing of micron MOSFET devices, electrical (parameters, DLTS) and optical (luminescence spectroscopy and wafer imaging) evaluation will also be done at the University of Maryland. Sumbicron processing, and Auger/SIMS analysis, will be done at the Army Research Laboratory, Adelphi, MD, through the ongoing collaborative program, at no cost to this proposal.The development of such light emitting device, will have a significant impact in developing viable fully CMOS compatible Si OEIC technology, with optical interconnects for on-chip guided and freespace optical processing and transmission.***