Investigation of Atomic Transport in Semiconductors Using Pressure and Stress

这个项目的目的是通过对流体静力和非流体静力状态对自身和杂质扩散的影响以及对硅中晶体生长的影响的基础研究，获得更多的了解。将使用固相外延作为模型系统，对研究人员最近发现的应力固体中的动力学驱动生长不稳定性的理论进行关键测试。简单的应力状态，如流体静力和双轴应力，对垂直于表面和平行于表面的原子扩散的影响将被测量并使用新发展的非流体静力热力学理论相互比较。这项研究的概念框架和关键参数值有望有助于确定主要的原子扩散机制；提供基准参数值以与从头计算理论进行比较；并允许预测原子在任意方向上的任意应力状态。这项研究产生的概念框架预计将影响半导体器件制造和应变层异质外延生长的当前研究。该项目解决了具有高潜在技术相关性的材料科学主题领域的基础研究问题。这项研究将在基础水平上为电子/光子器件的新方面贡献基本的材料科学知识。从研究中获得的基本知识和理解有望为提高先进器件和电路的性能和稳定性贡献新的知识，为设计和生产改进的材料和加工技术提供更多的基础知识和基础。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。*9813803Aziz本项目的目的是通过对流体静力和非流体静力状态对自体和杂质扩散的影响以及对硅中晶体生长的影响的基础研究，获得更多的了解。将使用固相外延作为模型系统，对研究人员最近发现的应力固体中的动力学驱动生长不稳定性的理论进行关键测试。简单的应力状态，如流体静力和双轴应力，对垂直于表面和平行于表面的原子扩散的影响将被测量并使用新发展的非流体静力热力学理论相互比较。这项研究的概念框架和关键参数值有望有助于确定主要的原子扩散机制；提供基准参数值以与从头计算理论进行比较；并允许预测原子在任意方向上的任意应力状态。这项研究产生的概念框架预计将影响半导体器件制造和应变层异质外延生长的当前研究。该项目解决了具有高潜在技术相关性的材料科学主题领域的基础研究问题。这项研究将在基础水平上为电子/光子器件的新方面贡献基本的材料科学知识。从研究中获得的基本知识和理解有望为提高先进器件和电路的性能和稳定性贡献新的知识，为设计和生产改进的材料和加工技术提供更多的基础知识和基础。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。***

9813803AzizThe aim of this project is to gain greater understanding through fundamental studies of the effects of hydrostatic and non-hydrostatic stress states on self and impurity diffusion, and on crystal growth in silicon. A critical test of the investigator's theory for his recently-discovered kinetically-driven growth instability in stressed solids will be performed using solid phase epitaxy as a model system. The effects of simple stress states, such as hydrostatic and biaxial stresses, on atomic diffusion perpendicular to the surface and parallel to the surface will be measured and compared to each other using newly developed non-hydrostatic thermodynamic theory. The conceptual framework and key parameter values emerging from this research are expected to aid in the determination of predominant atomistic diffusion mechanisms; to provide benchmark parameter values for comparison with ab initio theory; and permit the prediction of arbitrary stress states on atomic diffusion in arbitrary directions. The conceptual framework emerging from this research is expected to impact semiconductor device fabrication and current research in strained-layer heteroepitaxial growth.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new aspects of electronic/photonic devices. The basic knowledge and understanding gained from the research is expected to contribute new knowledge to improving the performance and stability of advanced devices and circuits by providing increased fundamental understanding and a basis for designing and producing improved materials, and processing technologies. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***9813803AzizThe aim of this project is to gain greater understanding through fundamental studies of the effects of hydrostatic and non-hydrostatic stress states on self and impurity diffusion, and on crystal growth in silicon. A critical test of the investigator's theory for his recently-discovered kinetically-driven growth instability in stressed solids will be performed using solid phase epitaxy as a model system. The effects of simple stress states, such as hydrostatic and biaxial stresses, on atomic diffusion perpendicular to the surface and parallel to the surface will be measured and compared to each other using newly developed non-hydrostatic thermodynamic theory. The conceptual framework and key parameter values emerging from this research are expected to aid in the determination of predominant atomistic diffusion mechanisms; to provide benchmark parameter values for comparison with ab initio theory; and permit the prediction of arbitrary stress states on atomic diffusion in arbitrary directions. The conceptual framework emerging from this research is expected to impact semiconductor device fabrication and current research in strained-layer heteroepitaxial growth.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new aspects of electronic/photonic devices. The basic knowledge and understanding gained from the research is expected to contribute new knowledge to improving the performance and stability of advanced devices and circuits by providing increased fundamental understanding and a basis for designing and producing improved materials, and processing technologies. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***