Resonant Tunneling Injection Lasers

提出的研究是研究由GaAs和inp基III-V半导体制成的谐振隧道注入激光器，其发射波长从可见光到近红外区域不等。PI最近制造了共振隧道激光器，首次显示了在77K下通过隧道注入机制实现种群反转的直接证据。提出的工作是优化器件设计，以最大限度地提高室温下的隧道电流，并证明该器件的调制频率高达90GHz，而传统量子阱激光器的调制频率为30GHz。

The proposed research is to investigate resonant tunneling injection lasers made of GaAs- and InP-based III-V semiconductors emitting at various wavelengths from visible to near IR region. The PI has recently made the resonant tunneling lasers that showed for the first time direct evidence for achieving population inversion through the tunneling injection mechanism at 77K. The proposed work is to optimize the device design to maximize the tunneling current at room temperature, and to demonstrate a high modulation frequency of this device up to 90GHz, compared to 30GHz for the conventional quantum well lasers.