Si-Based Interband Tunneling Diodes for High-Speed Logic and Low Power Memory Applications

ECS-9906260 Berger一个由特拉华州大学、海军研究实验室、雷神系统公司和特拉华州州立大学（一所历史悠久的黑人大学）组成的团队正在建立，以便在工业和政府实验室进行联合研究和学生培训。该提案寻求对满足两个标准的Si基隧道二极管的开发的支持：1.峰谷电流比（PVCR）超过4：1.2。与标准CMOS或HBT集成电路工艺兼容。同时满足这些要求的隧道二极管将通过增加带宽、降低功耗和减少标准电路的元件数量来增强现有的晶体管技术。应该注意的是，虽然该团队之前的工作主要涉及谐振带间隧穿二极管（PJTD），但该项目将对满足上述两个要求的任何Si基隧穿器件设计保持开放。实现高PVC要求隧道二极管设计同时最大化隧道电流和最小化谷电流。因此，有必要建立一个深入的隧道现象物理基础知识库。对声子结构的低温研究将有助于选择合适的隧道势垒。同时研究能隙态和深能级的影响，将有助于确定过电流的介质。这些实验的结果将有助于改进建模软件，并将是必不可少的高PVCR硅基隧道二极管的工程。此外，还将研究Si 1-x格克斯隧道势垒的作用。团队的所有成员将帮助设计结构和进行实验以及解释数据。此外，特拉华州大学将是主要合作伙伴，负责设备制造和测试。海军研究实验室将专注于隧道二极管的分子束外延生长，而雷神系统公司则专注于建模、建模软件、一些独特的器件制造和低温电气测量。特拉华州州立大学将利用特拉华州的设施重点研究低温光致发光。设想这些各方之间的信息自由流动以及学生访问对方的设施（每3个月2天至1周）进行技术讨论和实验。一些测试服务（深能级瞬态光谱）将外包。

ECS-9906260BergerA team is being built amongst the University of Delaware, the Naval Research Laboratory, Raytheon Systems Company, and Delaware State University, a historically black university, to perform joint research and student training in industry and government laboratories. This proposal seeks support for the development of Si-based tunnel diodes which meet two criteria:1. Peak-to-valley current ratios (PVCR) which exceed 4:1.2. Process compatibility with standard CMOS or HBT integrated circuit processing.Tunnel diodes which simultaneously meet these requirements will augment existing tran-sistor technologies by increasing bandwidth, lowering power consumption, and reducing the component count of standard circuits. It should be noted that while the prior work of this team has primarily dealt with resonant interband tunneling diodes (PJTD), this project will remain open to any Si-based tunneling device design which meets the above two require-ments. Achieving high PVCRs require tunnel diode designs which simultaneously maximize the tunnel current and minimize valley currents. As such, it is essential to develop a thor-ough knowledge base of the physics underlying tunneling phenomena. A low temperature study of the phonon structure will help to select an appropriate tunnel barrier. A simulta-neous study of the influence of gap states and deep levels will identify the media underlying excess current. The results of these experiments will serve to improve modelling software and will be essential to the engineering of high PVCR Si-based tunnel diodes. The role of Si1-x Gex tunnel barriers will be investigated as well.All members of the team will help in the design of structures and experiments to be performed as well as the interpretation of the data. In addition, the University of Delaware will be the primary partner responsible for device fabrication and testing. The Naval Research Laboratory will focus on the molecular beam epitaxial growth of the tunnel diodes, while Raytheon Systems keys on modeling, modeling software, some unique device fabrica-tion, and low temperature electrical measurements. Delaware State University will focus on low temperature photoluminescence using UDelaware facilities. A free flow of information between these parties as well as student visitation to each other's facilities (2 days to 1 week every 3 months) for technical discussions and experimentation is envisioned. Some testing services (deep level transient spectroscopy) will be outsourced.