SGER: Neutron Transmutation Doping of Diamond Films for Radiation Hardened Devices

9977896 kasichainula具有n型掺杂活性和半导体性能的外延或织构大晶粒金刚石薄膜在高温、高速、高剂量和高功率电子器件中具有潜力。迄今为止，沉积具有n型掺杂活性的金刚石膜的尝试都是不成功的，这些掺杂活性可以产生高载流子浓度和高迁移率。PI建议进行原理证明研究，通过双给体中子嬗变掺杂的新技术来克服这一限制。提出的研究包括在硅（100）晶圆衬底上沉积大晶粒尺寸（100）取向金刚石薄膜。第二层金刚石将由同位素富集的31Si和10B掺杂剂沉积。通过中子嬗变，再经过退火和辐射缺陷钝化处理，可以从31P和7Li掺杂剂中获得n型活性。在高中子通量下进行中子嬗变，可以提高31P和7Li掺杂中n型载流子浓度与未转化的10B掺杂中p型载流子浓度的比值。在氮离子环境下进行辐射诱导缺陷还原退火和氮离子钝化可以提高载流子迁移率

9977896KasichainulaEpitaxial or textured large grain size diamond films with n-type dopant activity and semiconducting behavior have potential for high temperature, high speed, high dose and high power electronic devices. Hitherto, attempts to deposit diamond films with n-type dopant activity that can generate high carrier concentration with high mobility have been unsuccessful. The PI proposes to perform proof-of principle studies to overcome this limitation by the novel technique of neutron transmutation doping of double donors. The proposed research consists of deposition of large grain size (100) oriented diamond films on silicon (100) wafer substrates. A second layer of diamond will be deposited with isotope enriched 31Si and 10B dopants. Neutron transmutation followed by annealing and passivation of radiation induced defects will be used to achieve n-type activity from 31P and 7Li dopants. The ratio of n-type carrier concentration from 31P and 7Li to that of p-type from non-transformed 10B dopants will be enhanced by performing neutron transmutation at high neutron fluence. Carrier mobility will be improved by annealing in nitrogen ion ambient for radiation induced defect reduction and passivation with nitrogen ions.***