Modeling and Simulation for Epitaxial Growth

这个项目将应用数学建模和计算模拟来研究薄膜的外延生长，特别是通过分子束外延(MBE)生长的半导体材料。这些研究课题的特点是复杂的几何结构和层次化的长度尺度，需要显著新的数学和数值方法。具体主题包括薄膜应变、加速数值方法、粗粒化和相互作用缺陷线的动力学。本项目将把数学建模和计算模拟应用于材料科学，特别是MBE(分子束外延)生长的半导体材料。虽然MBE只是许多可能的增长技术之一，但它是许多要求最高的应用程序的增长方法，例如用于无线通信的高性能、低功耗系统。对于分子束外延生长的建模和模拟通常还不是很完善，而且目前的计算方法不足以解决许多重要的外延问题。其目标是开发新的数学模型和计算方法，以显著提高最先进的水平。该项目涉及多学科，涉及数学(应用和核心)和材料科学，以及产业界和大学的参与。这种协作的显著特点是，它将建模、模拟和实验方面的专业知识结合在一个有凝聚力的小组中。

0074152CaflischThis project will apply mathematical modeling and computational simulation to epitaxial growth of thin films, in particular semiconductor materials grown by MBE (molecular beam epitaxy). The research topics are characterized by complex geometry and a hierarchy of length scales, requiring significantly new mathematical and numerical approaches. Specific topics include strain in thin films, accelerated numerical methods, coarse-graining and the dynamics of interacting defect lines.This project will apply mathematical modeling and computational simulation to material science, in particular to semiconductor materials grown by MBE (molecular beam epitaxy). Although MBE is just one of many possible growth techniques, it is the growth method for many of the most demanding applications, such as high-performance, low-power systems for wireless communications. Modeling and simulation are not generally well developed for MBE growth, and current computational methods are not sufficient to address many of the important problems of epitaxy. The goal is to develop new mathematical models and computational methods that will significantly advance the state of the art. This project is multi-disciplinary, involving mathematics (both applied and core) and materials science, as well as participation from both industry and university. The distinguishing feature of this collaboration is that it combines expertise in modeling, simulation and experimentation in one cohesive group.