Remote Plasma Enhanced Organometallic Chemical Vapor Deposition of High Permittivity Dielectrics

随着微处理器芯片中的晶体管尺寸不断减小，必须按照《国家半导体技术路线图》中的规定解决具体的材料和设计问题。该项目解决了用高介电常数材料代替SiO2栅极电介质的问题。本研究将使用有机金属化学气相沉积法来沉积存款HfO 2、Al 2 O3和HfAlxOy。包括O2、H2O和N2 O在内的各种氧源将用于通过最小化氢和碳污染来优化膜特性。 含有氧前体和氦的远程等离子体也将用于产生含活性氧的物质以优化膜性质。碳杂质浓度将与薄膜性质相关。拟议的工作将导致远程等离子体有机金属化学气相沉积的理解，并将有利于其他发展中的研究领域。这些领域包括在塑料基板上制造显示器和设备、低温玻璃上的光学涂层、MEMS压电器件以及光伏设备应用，如玻璃涂层和透明导体。 本研究的主要目的是证明均匀的薄膜沉积HfO 2，Al 2 O3，和HfAlxOy在Si上的远程等离子体增强OMCVD，并广泛地表征薄膜的透射电子光谱，XPS，C-V测量，等等。

As the transistors in microprocessor chips continue to decrease in size, specific materials and design issues must be addressed as outlined in the National Technology Roadmap for Semiconductors. This project addresses the problem of replacing the SiO2 gate dielectric with a high dielectric constant material. This proposed work will use organometallic chemical vapor deposition to deposit HfO2, Al2O3 and HfAlxOy. Various oxygen sources including O2, H2O, and N2O will be used to optimize film properties by minimizing hydrogen and carbon contamination. A remote plasma containing the oxygen precursor and helium will also be used to create reactive oxygen containing species to optimize film properties. Carbon impurity concentration will be correlated to film properties. The proposed work will lead to an increased understanding of remote plasma organometallic chemical vapor deposition and will benefit other developing areas of research. These areas include the manufacture of displays and devices on plastic substrates, optical coatings on low temperature glasses, piezoelectrics for MEMS, and photovoltaic device applications such as antireflection coatings and transparent conductors. The primary objectives of this study are to demonstrate uniform film deposition of HfO2 , Al2O3, and HfAlxOy on Si by remote plasma enhanced OMCVD, and to extensively characterize the films by transmission electron spectroscopy, XPS, C-V measurements, among others.