Dislocations in GaN

该项目旨在更好地了解GaN中的位错。该方法涉及到产生已知的伯格斯矢量和已知的字符的位错，以及这些位错在薄膜生长过程中如何传播的研究。此外，该项目还讨论了位错传播如何受到生长表面取向的影响，特别是在横向外延过生长（LEO）期间。这些位错的电学和光学性质也将被检查。特别设计的晶界将由有序排列的位错组成，这些位错是自对准和自稳定的。位错取向差角的变化将用于控制位错间距和位错的性质，而边界平面的变化将用于Burger矢量控制。在一个样品中有许多排列的位错有利于有意义的统计分析。该项目解决了材料科学领域的基础研究问题，具有高度的技术相关性。这些研究将提高对氮化镓缺陷的基本理解，氮化镓是先进微电子学和光子学的关键材料。该计划的一个重要特点是通过在基本和技术上重要的领域培训学生，以及促进多样性的教育推广活动，将研究和教育结合起来。***

This project aims at greater understanding of dislocations in GaN. The approach involves generation of dislocations with known Burgers vectors and known character, and the study of how these dislocations propagate during thin film growth. Additionally, the project addresses how dislocation propagation is influenced by orientation of the growth surface, particularly during lateral epitaxial overgrowth (LEO). Electrical and optical properties of these dislocations will also be examined. Specially designed grain boundaries will consist of ordered arrays of dislocations which are self-aligning and self-stabilizing. Variation of misorientation angle will be used to give control over dislocation spacing and character of the dislocations while variation of the boundary plane will be used for Burger vector control. Having many aligned dislocations in a single specimen gives the benefit of meaningful statistical analysis. %%% The project addresses basic research issues in a topical area of materials science with high technological relevance. These studies will improve the fundamental understanding of defects in Gallium Nitride, which is a key material to advanced microelectronics and photonics. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area, and education outreach activities to promote diversity. ***