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NER: Synthesis of Boron Nitride Nanotubes for Nanoelectronics

NER: Synthesis of Boron Nitride Nanotubes for Nanoelectronics
NER:用于纳米电子学的氮化硼纳米管的合成
批准号:
0210283
负责人:
Raj Singh
金额:
$8.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2002
资助国家:
美国
项目状态:
已结题
起止时间:
2002-07-15 至 2004-06-30

项目摘要

项目成果

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中文摘要
翻译
摘要/ ABSTRACT0210283 singh本提案是响应纳米尺度科学与工程计划,项目招标NSF 01-157, NER类别。本研究的主要目的是为电子回旋共振微波等离子体化学气相沉积(ECR-MPCVD)可预测和可重复地合成/制造氮化硼纳米管(BN-NTs)提供基础知识。纯氮化硼纳米管为实际应用提供了诱人的机会。它们提供了独特的电气和机械性能组合。他们预测的宽带隙与管结构无关,这揭示了BN-NTs在基于场发射和冷阴极特性的新一代纳米电子器件中的潜力。这个探索性的NER项目将使用ECR-MPECVD合成BN-NTs。本研究的独特之处在于选择新的金属有机前驱体,加入合适的催化剂,并提供特殊的表面预处理,以促进单壁和多壁bn - nt的形成和生长。此外,将对等离子体化学和加工参数进行原位监测,以了解BN-NTs的形成和生长。本研究将研究两个独特的方面:(1)前驱体化学在BN-NTs合成中的作用;(2)底物预处理(如播种和离子注入表面改性)对BN-NTs形成和生长的影响。此外,还研究了Li3N和Mg3N2等特殊催化剂对BN-NTs合成的影响。HRTEM, EELS, SEM, TED和可能的其他分析技术将表征纳米管。此外,还将测量BN-NTs的选定电学性能,以用于电子领域。在更广泛的范围内,这项研究的成功完成将为合成具有优异电学,热学和机械性能的BN-NTs提供知识库,用于电子应用。预计未来几代纳米结构电子器件可以基于bn - nt。例如,BN-NTs可以作为一个完美的纳米绝缘管状屏蔽层,用于封装任何导电材料。这就提供了在大范围内定制纳米管电传输的可能性。BN-NTs独特的场发射特性和冷阴极特性在平板显示器件中有着广泛的应用。该项目的另一个重要目标是通过参与该项目的研究和他们的硕士和博士论文来培养研究生和研究助理/博士后。此外,少数民族/女性高中和本科学生也将受到指导并接触到本研究。
英文摘要
ABSTRACT0210283 SinghThis proposal was received in response to the Nanoscale Science and Engineering Initiative, Program Solicitation NSF 01-157, in the NER category. The primary objective of this research is to develop a fundamental understanding for synthesizing/manufacturing boron nitride nanotubes (BN-NTs) predictably and reproducibly by Electron Cyclotron Resonance Microwave Plasma Chemical Vapor Deposition (ECR-MPCVD). Pure BN nanotubes present an attractive opportunity for practical applications. They offer a unique combination of electrical and mechanical properties. Their predicted wide band-gap is independent of tube structure, which reveals BN-NTs potential for new generations of nanoelectronic devices based on field emission and cold cathode characteristics. This exploratory NER project will use ECR-MPECVD to synthesize BN-NTs. The unique features of this study will be to select novel metal-organic precursors, incorporate appropriate catalysts, and provide special surface pre-treatments to enhance formation and growth of single and multi-walled BN-NTs. In addition, in situ monitoring of plasma chemistry and processing parameters will be performed to relate to BN-NTs formation and growth. The proposed research will investigate two unique aspects: (1) Roles of the precursor chemistry on the synthesis of BN-NTs, and (2) Effects of substrate pretreatment such as surface modification by seeding and ion implantation on the BN-NTs formation and growth. In addition, influence of special catalysts such as Li3N and Mg3N2 on the synthesis of BN-NTs will be investigated. HRTEM, EELS, SEM, TED and possibly other analytical techniques will characterize the nanotubes. In addition, selected electrical properties of BN-NTs will be measured for applications in electronics.On a broader scale, a successful completion of this research will lead to a knowledge base for synthesizing BN-NTs with exceptional electrical, thermal, and mechanical properties for applications in electronics. It is expected that future generations of nanostructure electronic devices can be based on BN-NTs. For example, BN-NTs may serve as a perfect nano-insulating tubular shield for any conducting material encapsulated within. This offers the possibility of nanotube electrical transport tailored over a wide range. Unique field emission and cold cathode characteristics of BN-NTs have applications in flat panel display devices. Another important goal of this project is to train graduate student and research associate/post doc through participation on this research project and their MS and Ph.D. theses. In addition, minority/women high school and undergraduate students will also be mentored and exposed to this research.
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Distributed Nanocrystal Arrays for Quantum Electronics and Sensing
  • 批准号:
    2126275
  • 项目类别:
    Standard Grant
  • 资助金额:
    $31.0万
  • 财政年份:
    2021
  • 负责人:
    Raj Singh
  • 依托单位:
EAGER: Manufacturing of Diamond Nanocrystals for Quantum Applications
  • 批准号:
    2103058
  • 项目类别:
    Standard Grant
  • 资助金额:
    $15.0万
  • 财政年份:
    2021
  • 负责人:
    Raj Singh
  • 依托单位:
PFI-TT: Thermal Management of Power Semiconductor Electronics
  • 批准号:
    2122495
  • 项目类别:
    Standard Grant
  • 资助金额:
    $25.0万
  • 财政年份:
    2021
  • 负责人:
    Raj Singh
  • 依托单位:
I-Corps: Nanomaterials for Thermal Management of Power Electronics
  • 批准号:
    1455067
  • 项目类别:
    Standard Grant
  • 资助金额:
    $5.0万
  • 财政年份:
    2014
  • 负责人:
    Raj Singh
  • 依托单位:
国内基金
海外基金
新型滤波器综合技术-直接综合技术(Direct synthesis Technique)的研究及应用
  • 批准号:
    61671111
  • 项目类别:
    面上项目
  • 资助金额:
    58.0万元
  • 批准年份:
    2016
  • 负责人:
    肖飞
  • 依托单位: