Roughening, Etching, and Nanoscale Patterning of Si and Ge
Roughening, Etching, and Nanoscale Patterning of Si and Ge
批准号:
0301821
负责人:
John Weaver
金额:
$37.5万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2003
资助国家:
美国
项目状态:
已结题
起止时间:
2003-07-01 至 2007-06-30
中文摘要
该项目的重点是原子尺度的相互作用与热激活干法蚀刻,并与表面粗糙化没有蚀刻(解吸)。具有吸附卤素的硅(100)表面作为模型系统来解决广泛感兴趣的问题,包括当存在竞争性反应途径时如何以及为什么发生表面改性,以及吸附物和应变如何改变反应的能量学。与锗(100)的结果的比较将检验对硅(100)得出的结论的一般性。重点是表面的结构变化。变温扫描隧道显微镜用于推进粗糙化,蚀刻和纳米级图案化的理解到一个新的水平,通过以下修改,因为他们发生,事件,在高温下。%拟议方案的一个关键组成部分涉及研究生和本科生的教育和培训。由国家科学基金会支持的学生将加入一个由来自世界各地的人组成的团体。他们将与资深小组成员一起工作,同时熟悉实验室。一般来说,学生在第二年年底前是出版物的共同作者。他们充分参与起草自己的和其他小组成员的文稿,以及诸如本报告这样的提案。他们被期望去竞争学生奖,在会议上发表论文。他们还被期望为年轻学生的教育做出贡献。本科生完全融入小组,他们的贡献反映在合著的出版物。我们的实验室开放给未来的本科生和研究生参观,参与工程开放日的新生和参与高级设计项目的高年级学生从中受益。UIUC材料科学研究生中有26%是女性;目标是增加总体人数并招募到韦弗集团。 将开发用于变温扫描隧道显微镜的仪器,这是一种最先进的技术。鼓励合作项目。与以往在国家科学基金支持下取得的成果一样,将通过出版物、提供会议文件以及应邀举行的会谈和研讨会来传播成果。虽然有丰富的文献描述了薄膜和纳米结构的原子级生长,经常通过扫描隧道显微镜提供关键的见解,但对材料去除和纳米级图案化的前景关注得少得多。我们对材料去除的关注提供了重要的见解,这将大大拓宽知识基础,并将有助于先进技术的发展。
英文摘要
This project focuses on atomic-scale interactions associated with thermally-activated dry etching, and with surface roughening without etching (desorption). Silicon (100) surfaces with adsorbed halogens serve as model systems to address problems of broad interest including how and why surface modifications occur when there are competitive reaction pathways and how adsorbates and strain alter the energetics of reaction. Comparison to results for germanium (100) will test the generality of conclusions drawn for silicon (100). The emphasis is on structural changes at surfaces. Variable temperature scanning tunneling microscopy is used to advance the understanding of roughening, etching, and nanoscale patterning to a new level by following modifications as they occur, event-by-event, at high temperature.%%%A key component of the proposed program involves the education and training of graduate and undergraduate students. Students supported by the NSF would join a group made up of people from around the world. They would work with senior group members while they become familiar with the laboratory. In general, students are coauthors of publications by the end of the second year. They participate fully in the preparation of manuscripts, both their own and those of other group members, and of proposals such as this one. They are expected to compete for student prizes, to present papers at conferences. They are also expected to contribute to the education of younger students. Undergraduate students are fully integrated into the group, and their contributions are reflected by coauthorship of publications. Our laboratories are open for visits by prospective undergraduate and graduate students, freshmen involved in Engineering Open House and upperclassmen involved in senior design projects benefit from access to them. Twenty-six percent of the graduate students in Materials Science at UIUC are women; a goal is to increase the overall number and to recruit into the Weaver group. Instrumentation will be developed for variable temperature scanning tunneling microscopy, a state of the art technique. Collaborative projects are encouraged. The results will be disseminated through publications, contributed conference papers, and invited talks and seminars, as in the past with results obtained under NSF support. While there is a rich literature that describes atomic-scale growth of films and nanostructures, frequently with key insights provided by scanning tunneling microscopy, far much less attention paid to material removal and the prospects of nanoscale patterning. Our focus on material removal provides important insights that will broaden the knowledge base significantly and will contribute to advanced technologies.
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会议论文
Heteroepitaxial Metal Nanostructure Diffusion Through Collective Slip
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批准号:0703995
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项目类别:Continuing Grant
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资助金额:$0.0万
-
财政年份:2007
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负责人:John Weaver
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依托单位:
U.S.-Pakistan Cooperative Research: Growth and Characterization of Semiconductor and Magnetic Nanocrystals Using Buffer-Layer-Assisted Growth
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批准号:0353419
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2004
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负责人:John Weaver
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依托单位:
Fluorine-Silicon Interactions and Competitive Etching Pathways
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批准号:0096306
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项目类别:Standard Grant
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资助金额:$34.0万
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财政年份:2000
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负责人:John Weaver
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依托单位:
Fluorine-Silicon Interactions and Competitive Etching Pathways
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批准号:9803177
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项目类别:Standard Grant
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资助金额:$34.0万
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财政年份:1998
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负责人:John Weaver
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依托单位:
Electronic and Chemical Interactions of Buckminster Fullerene
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批准号:9108419
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项目类别:Continuing Grant
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资助金额:$62.59万
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财政年份:1991
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负责人:John Weaver
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依托单位:
World Revision of the Caddisfly Family Lepidostomatidae (Insecta: Trichoptera)
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批准号:8907401
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项目类别:Standard Grant
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资助金额:$4.83万
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财政年份:1990
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负责人:John Weaver
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依托单位:
Structural and Electronic Properties of Epitaxial Overlayers: Interfacial Phenomena
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批准号:8610837
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项目类别:Continuing Grant
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资助金额:$67.94万
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财政年份:1987
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负责人:John Weaver
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依托单位:
Electronic Interactions in Metal-Hydrogen Systems (MaterialsResearch)
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批准号:8216489
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项目类别:Continuing Grant
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资助金额:$63.14万
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财政年份:1983
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负责人:John Weaver
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依托单位:
Electronic Structure Studies of Titanium and Zirconium Hydrides
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批准号:8001673
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项目类别:Standard Grant
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资助金额:$1.86万
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财政年份:1980
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负责人:John Weaver
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依托单位:
Photoelectron Spectroscopy Studies of Transition Metal Carbides Using Synchrotron Radiation
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批准号:7821080
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项目类别:Continuing Grant
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资助金额:$16.3万
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财政年份:1979
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负责人:John Weaver
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依托单位:
Editing and Publication of Report on Idoe International Workshop on Marine Geology and Geophysics of the Caribbean Region and Its Resources
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批准号:7703265
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项目类别:Standard Grant
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资助金额:$0.97万
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财政年份:1977
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负责人:John Weaver
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依托单位:
Travel to Attend: Fifth International Conference on Vacuum Ultraviolet Radiation Physics, Montpellier, France, 09/05-09/77
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批准号:7714770
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项目类别:Standard Grant
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资助金额:$0.1万
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财政年份:1977
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负责人:John Weaver
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依托单位:
Acquisiton of Equipment For Ultraviolet and Soft X-Ray Photoelectron Spectroscopy
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批准号:7707728
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项目类别:Standard Grant
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资助金额:$2.73万
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财政年份:1977
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负责人:John Weaver
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依托单位:
海外基金