Polycrystalline Silicon Carbide Micro- And Nanoelectromechanical Systems

本提案的目标是推进碳化硅（SiC）微机电系统（MEMS）和纳米机电系统（NEMS）的最新技术。主要的焦点是多晶SiC（多晶SiC）和表面微加工作为并行多晶硅表面微加工。因此，提出的研究将制造和评估一系列表面微机械器件的性能，这些器件共同使人们能够系统地了解聚碳化硅材料特性与器件性能之间的关系。mems规模的器件将在我们的实验室制造和表征，而nems规模的器件（例如，共振纳米光束）将与加州理工学院的Michael Roukes教授合作制造和表征，他对该研究项目的贡献将由补充项目的资金支持。支持本提案目标的核心目标是：(1)低压化学气相沉积（LPCVD）技术，沉积温度约为600℃；（ii）可控原位掺杂多晶硅的能力；（iii）清楚了解聚碳化硅材料的性质及其与沉积条件的关系；（iv）洞察与材料特性相关的器件性能。600℃的沉积温度范围很重要（从热预算和工艺兼容性的角度来看），因为主要的MEMS材料多晶硅是在这个温度范围内沉积的。这项研究将建立在一个独特的，大型LPCVD炉最近由我们的小组在CWRU建造。该炉的尺寸适合大批量生产SiC薄膜，因此将为拟议的研究提供一个有利的平台。知识优势：SiC以其出色的材料特性而闻名，这使得MEMS/NEMS在硅的恶劣环境（例如，高温，腐蚀性介质，侵蚀条件，高冲击载荷）中的应用成为可能。其固有的生物相容性使其成为MEMS治疗和诊断设备的主要材料。最新的多碳化硅MEMS/NEMS技术的进步将为该领域的进步和发展开辟新的可能性。例如，SiC MEMS/NEMS正被用于无线通信和微型发电应用。更广泛的影响：拟议的项目在教育和商业应用方面具有超越研究的影响。所获得的知识将积极纳入我们的研究生和本科生的研究经验和教育课程，并传播给高中生。研究成果将通过我们的直接和间接的工业合作实现商业化。最后，SiC作为一种高性能材料，在许多非mems /NEMS应用中（例如，涂层，介电材料，大功率电子产品）备受关注。

The goal of this proposal is to advance the state-of-the-art in silicon carbide (SiC)microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS). The primary focus is on polycrystalline SiC (poly-SiC) and surface micromachining as a parallel to polysilicon surface micromachining. Accordingly, the proposed research will fabricate and evaluate the performance of a range of surface micromachined devices that together enable a systematic understanding of the relationships between material properties and device performance for poly-SiC. While the MEMS-scale devices will be fabricated and characterized in our laboratories, the NEMS-scale devices (e.g., resonating nano-beams) will be fabricated and characterized in collaboration with Prof. Michael Roukes of Caltech, whose contribution to this research project will be supported by funding from complementary projects.The central objectives supporting the goal of this proposal are: (1) a low pressure chemical vapor deposition (LPCVD) technology for poly-SiC with deposition temperatures around 600C; (ii) a controlled in-situ doping capability for poly-SiC; (iii) a clear understanding of the poly-SiC material properties and their relation to deposition conditions; and (iv) insight into device performance as related to material properties. The 600C deposition temperature range is significant (from a thermal budget and process compatibility point of view) since polysilicon, the dominant MEMS material, is deposited in this temperature range. This research will build on a unique, large-scale LPCVD furnace recently constructed by our group at CWRU. The furnace is sized for high-volume production of SiC films and thus will provide an enabling platform for the proposed research.Intellectual Merit: SiC is known for its outstanding material properties, which are enabling for applications of MEMS/NEMS in harsh environments (e.g., in presence of high temperatures, corrosive media, erosive conditions, high impact loads) over silicon. Its inherent biocompatibility makes it a leading material for MEMS therapeutic and diagnostic devices. Advancement of poly-SiC MEMS/NEMS state-of-the-art will open new possibilities for advancement and growth of the field. For example, SiC MEMS/NEMS are being pursued for wireless communication and for micro-power generation applications.Broader Impact: The proposed project has impact beyond research, in both education and commercial applications. The knowledge gained will be actively incorporated into our graduate and undergraduate research experiences and educational courses, and disseminated to high school students. The research results will be commercialized through our direct and indirect industrial collaborations. Finally, SiC, being a high performance material, is of interest in many non-MEMS/NEMS applications (e.g., coatings, dielectrics, high power electronics).