NER: Exploring the nano structural properties of the 2 nm interface layer of the metal oxide and its nano device characteristics

本研究的目的是探索在制备纳米尺寸器件时，在5纳米厚的金属氧化膜和硅衬底之间形成的近2纳米（~2纳米）厚的界面层的纳米结构和电性能。方法是通过实验研究1)掺杂剂对界面性能的影响，2)上述界面与预沉积的5A TaNx界面层的存在，以及3)界面材料性能与纳米器件电学行为的关系。这项研究的成功对于通过提高高科技产品的制造能力和推出新产品来改善人们的日常生活至关重要。该项目还为研究生和本科生提供了多学科教育，提高了国家的生产竞争力。研究成果将使科学界和工程界受益。

The objective of this research is explore the nanostructural and electrical properties of the near 2 nanometer (~2 nm)-thick interface layer that is formed between the 5 nm-thick metal oxide film and the silicon substrate when a nano-size device is prepared. The approach is to experimentally investigate 1) the influence of the dopant on the interface properties, 2) the above interface with the existence of a pre-deposited 5A TaNx interface layer, and 3) the relationship between the interface material properties with the nano device's electrical behavior. The success of this research is critical to the improvement of people's daily lives through the advancement of manufacturing capability of high-tech products and introduction of new products. This project also supplies graduate and undergraduate students with milti-disciplinary education, which increases the country's production competition capability. Research results will benefit the scientific and engineering communities.