课题基金 / 基金详情

2006 Defects in Semiconductors Gordon Conference; New London, NH; July 2-7, 2006

2006 Defects in Semiconductors Gordon Conference; New London, NH; July 2-7, 2006
2006 年半导体缺陷戈登会议;
批准号:
0625454
负责人:
Matthew McCluskey
金额:
$0.5万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2006
资助国家:
美国
项目状态:
已结题
起止时间:
2006-07-15 至 2007-06-30

项目摘要

项目成果

Matthew McCluskey的其他基金

相似基金

相关文献

中文摘要
翻译
技术上的。关于半导体缺陷的戈登研究会议将于2006年7月2日至7日在新伦敦的科尔比-索耶学院举行。会议的目标是促进对同质和结构半导体中的缺陷和缺陷相关现象的基本了解。这些缺陷在电子材料的生长和/或加工过程中发生或引入。会议将为大学、政府和工业科学家之间的互动提供一个论坛。主题包括半导体中的氢,纳米结构,光伏,第三类氮化物,自旋电子材料,宽带隙半导体,化合物半导体,硅和钻石,以及宽带隙半导体的掺杂。将强调具有争议性和/或前瞻性的主题。会议讨论了一系列块状和纳米级电子材料中的缺陷,以帮助促进对宽带隙半导体和掺杂纳米颗粒等新兴材料的基本了解。非技术性的。这次会议的一个重要影响将是增加来自代表性不足群体的年轻科学家的出席人数。戈登的会议设置和形式鼓励多层面的互动,以及高级员工和职业生涯早期员工之间的互动。将努力使妇女和少数群体更好地参与与电子材料有关的领域。随着评估该领域和未来方向的机会,预计大学、研究机构和行业之间将建立新的联系。申请的NSF资金将用于促进年轻教师、博士后研究助理和研究生参加会议。
英文摘要
Technical. A Gordon Research Conference on Defects in Semiconductors will be held at Colby-Sawyer College in New London, NH, July 2-7, 2006. The goal of the conference is to promote fundamental understanding of defects and defect-related phenomena in homogeneous and structured semiconductors. These defects occur, or are introduced, during growth and/or processing of electronic materials. The conference will provide a forum for interaction between university, government and industrial scientists. Topics include Hydrogen in Semiconductors, Nanostructures, Photovoltaics, Group III-Nitrides, Spintronic Materials, Wide Band Gap Semiconductors, Compound Semiconductors, Silicon and Diamond, and Doping of Wide Gap Semiconductors. Topics that are controversial and/or forward-looking will be emphasized. The conference deals with defects in a broad range of bulk and nanoscale electronic materials to assist advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors and doped nanoparticles. Non-technical. An important impact of this conference will be to increase the attendance of young scientists from underrepresented groups. Gordon conference setting and format encourage interactions on multiple levels, and among senior staff and those early in their careers. Efforts will be made to improve the inclusion of women and minorities in fields related to electronic materials. Along with the opportunity to assess the field and future directions, it is expected that new ties will be established among universities, research institutions, and industry. The requested NSF funds will be used to facilitate participation in the meeting by young faculty, postdoctoral research associates and graduate students.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Persistent Optical Phenomena in Oxide Semiconductors
  • 批准号:
    2335744
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $47.39万
  • 财政年份:
    2024
  • 负责人:
    Matthew McCluskey
  • 依托单位:
Persistent photoconductivity in titanate semiconductor crystals
  • 批准号:
    2109334
  • 项目类别:
    Standard Grant
  • 资助金额:
    $39.67万
  • 财政年份:
    2021
  • 负责人:
    Matthew McCluskey
  • 依托单位:
Persistent Photoconductivity in Strontium Titanate and Related Oxides
  • 批准号:
    1561419
  • 项目类别:
    Standard Grant
  • 资助金额:
    $39.86万
  • 财政年份:
    2016
  • 负责人:
    Matthew McCluskey
  • 依托单位:
Dynamics of Localized Photoexcitations in Condensed Matter Systems
  • 批准号:
    1106379
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $37.5万
  • 财政年份:
    2011
  • 负责人:
    Matthew McCluskey
  • 依托单位:
海外基金