SBIR Phase II: Novel Hybrid Rapid Thermal Processing (HRTP) Systems for Annealing of Advanced Silicon Devices

这个小型企业创新研究第二阶段项目的重点是开发一种新型的高温系统，用于加工先进的硅器件。目前使用的快速热处理（RTP）系统由于其相对大的时间常数而导致实质上的掺杂剂分布加宽。本计画将结合快速热处理与雷射退火之优点，发展一种新型的混合式快速热处理系统。HRTP退火的优势在项目的第一阶段得到了证明。在第二阶段项目中，将进行广泛的热模拟研究，以了解、优化和扩大工艺。快速热处理（RTP）系统是半导体制造操作的关键部分，用于形成栅极氧化物、硅化物和退火离子注入掺杂剂，以形成超浅结。这些应用的市场规模超过5亿美元/年。随着器件的快速小型化，迫切需要开发更高的斜坡速率和更高温度的退火系统来实现超浅结的形成。拟议的HRTP系统有望填补这一空白。HRTP系统也可用于宽带隙半导体如GaN和SiC的热退火，因为它们需要极高的温度，这是传统系统无法实现的。

This Small Business Innovation Research Phase II project focuses on development of a novel high-temperature system for processing of advanced silicon devices. Currently used rapid thermal processing (RTP) systems result in substantial dopant profile broadening because of their relatively large time constants. The development of a novel Hybrid Rapid Thermal Process (HRTP) system which combines the advantages of RTP and laser annealing will be accomplished through this project. The advantages of HRTP anneals was demonstrated in the Phase I of the project. In the Phase II project extensive thermal simulation studies will be performed to understand, optimize and scale up the process.Rapid Thermal Processing (RTP) systems are a critical part of semiconductor manufacturing operations and are used to form gate oxides, silicides and annealed ion implanted dopants for formation of ultra-shallow junctions. The market-size for these applications exceeds $500 M/year. With the rapid miniaturization of the devices, there is a strong need to develop higher ramp rate and higher temperature annealing systems to achieve the formation of ultra-shallow junctions. The proposed HRTP system is expected to fill this niche. The HRTP system can also be usedin thermal annealing of wide band gap semiconductors such as GaN and SiC as they require extremely high temperature, which cannot be achieved by traditional systems.