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Sensors: Two Types of Suspended-Silicon-Nanowire Based Sensors of Ultra-high Sensitivity

Sensors: Two Types of Suspended-Silicon-Nanowire Based Sensors of Ultra-high Sensitivity
传感器:两种超高灵敏度悬浮硅纳米线传感器
批准号:
0822609
负责人:
Cheng Luo
金额:
$10.07万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2007
资助国家:
美国
项目状态:
已结题
起止时间:
2007-09-01 至 2009-08-31

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中文摘要
翻译
0529104 LUO该项目将系统地探索一种减薄和修剪方法,使用理论,数值和实验研究相结合的方法从硅微丝生产硅纳米线(SiNW)。减薄和修剪方法将用于生成直径低至20 nm的SiNW。随后,将开发两种新型的基于悬浮硅纳米线的超高灵敏度传感器,分别用于检测感兴趣的无毒和有毒目标。一维纳米结构由于其在微/纳米器件中的潜在应用而引起了人们的极大关注。由于硅是集成电路和微制造工艺中使用最广泛的材料,并且具有独特的机械和电学特性,因此特别是硅纳米线受到了广泛的关注。然而,由于现有制造方法的缺点,需要新的方法来生产不仅可以大规模制造而且可以批量集成到功能器件的硅纳米线。所提出的减薄和修剪方法被认为是这样的方法,并且将允许精确控制SiNW的结构、尺寸和位置。此外,该方法可以用于突破光刻的限制,在某种意义上,通过任何光刻方法制造的硅特征可以使用该方法进一步小型化。与基于微束的传感器相比,这两种类型的传感器的灵敏度预计将高出几个数量级。该项目将通过为本科生和研究生提供新的教学模块和演示文稿,以及在K-12学生和教师的网站上制作纳米技术概念动画,为纳米技术教育做出贡献。
英文摘要
0529104LUOThis project will systematically explore a thinning and trimming approach to the production of silicon nanowires (SiNW) from silicon microwires using a combination of theoretical, numerical and experimental investigations. The thinning and trimming approach will be used to generate SiNWs of diameters down to 20nm. Subsequently, two types of new suspended-SiNW-based sensors of ultra-high sensitivity will be developed to detect nontoxic and toxic targets of interest, respectively. One-dimensional nanostructures have attracted great attention recently because of their potential applications as excellent components in micro/nanodevices. SiNWs in particular have received much attention since silicon is the most widely used material in integrated-circuit and microfabrication processes and has unique mechanical and electrical properties. However, due to the shortcomings of the existing fabrication approaches, new methods are needed to produce SiNWs that cannot only be massively fabricated but also batch integrated to functional devices. The proposed thinning and trimming approach is believed to be such a method, and would permit precise control of the structure, size and positions of SiNWs. Furthermore, this method may be used to break through the limitation of lithography in the sense that silicon features fabricated by any lithographic methods can be further miniaturized using the approach. Compared with microbeam-based sensors, the two types of sensors are expected to be several orders higher in sensitivity. The project will contribute to nanotechnology education through new teaching modules and presentations for undergraduate and graduate students, and the animation of nanotechnology concepts on a website for K-12 students and teachers.
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Generation Of Sidewall Patterns Using A Thermal Shape-Memory Polymer
  • 批准号:
    1030659
  • 项目类别:
    Standard Grant
  • 资助金额:
    $30.0万
  • 财政年份:
    2010
  • 负责人:
    Cheng Luo
  • 依托单位:
Development Of A Nanopunching Lithography Method For Generating Sidewall Templates And Polymer-Based Nanodevices
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    0900595
  • 项目类别:
    Standard Grant
  • 资助金额:
    $30.0万
  • 财政年份:
    2009
  • 负责人:
    Cheng Luo
  • 依托单位:
Theoretical, Numerical and Experimental Studies of an Intermediate-Layer Lithography Approach
  • 批准号:
    0654202
  • 项目类别:
    Standard Grant
  • 资助金额:
    $30.47万
  • 财政年份:
    2007
  • 负责人:
    Cheng Luo
  • 依托单位:
Theoretical, Numerical and Experimental Studies of an Intermediate-Layer Lithography Approach
  • 批准号:
    0811888
  • 项目类别:
    Standard Grant
  • 资助金额:
    $28.07万
  • 财政年份:
    2007
  • 负责人:
    Cheng Luo
  • 依托单位:
国内基金
海外基金
Understanding complicated gravitational physics by simple two-shell systems
  • 批准号:
    12005059
  • 项目类别:
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  • 资助金额:
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  • 批准年份:
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  • 负责人:
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  • 依托单位:
激发态氢气分子(e,2e)反应三重微分截面的高阶波恩近似和two-step mechanism修正
  • 批准号:
    11104247
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    25.0万元
  • 批准年份:
    2011
  • 负责人:
    杨则金
  • 依托单位: