Materials World Network: Growth and Characterization of Bulk Crystals and Epitaxial Films of Beta-Ga203, SnO2, In203 and ZnO

该奖项是根据2009年美国复苏和再投资法案（公法111-5）资助的。该材料世界网络项目由DMR-CER和DMR-OSP支持。该材料世界网络研究项目由德国柏林莱布尼茨晶体生长研究所（IKZ）的Roberto Fornari教授；德国柏林洪堡大学Recardo Manzke教授；来自加州大学圣巴巴拉分校（UCSB）的James S. Speck教授专注于最高质量单晶氧化物的生长，使高性能氧化物薄膜成为可能。氧化物通常用于显示器和太阳能电池应用。在这个项目中获得的洞察力为更高性能的发光二极管、显示器和太阳能电池创造了新的途径。此外，该项目的学生在美国和德国从事实验和理论活动，因此将在国际环境中接触广泛的科学问题。从半导体科学和技术的角度对氧化物的探索为发现新的物理学以及开发具有前所未有的性能和功能的新器件提供了令人兴奋的机会。半导体二元氧化物（β - ga2o3, In2O3, SnO2, ZnO）作为新型宽带隙电子材料的探索和开发引起了人们极大的兴趣。当在非氧化物半导体（如Si， GaAs）中进行控制掺杂的高纯度外延膜生长时，它们作为一类新的半导体（nsf合作伙伴UCSB）具有巨大的潜力。在这种情况下，该项目解决了一个主要瓶颈，即同质外延的大块衬底的可用性（合作伙伴IKZ和HU Berlin）。我们的合作伙伴IKZ和HU在单晶衬底上提供高质量的同外延生长，为半导体氧化物的突出科学问题提供了解决方案，包括：无意中n型掺杂的起源；表面电子积累层的存在；p型掺杂和p-n均结的发展。预计将对技术产生重大影响：作为研究重点的宽带隙氧化物是透明电子器件、高频器件、多功能器件以及潜在的光发射器的主要候选材料。

This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). This Materials World Network project is supported by DMR-CER and DMR-OSP.This Materials World Network research program between Prof. Roberto Fornari from the Leibniz Institute for Crystal Growth (IKZ), Berlin, Germany; Prof. Recardo Manzke from the Humboldt University (HU), Berlin, Germany; and Prof. James S. Speck from the University of California, Santa Barbara (UCSB) focuses on the growth of the highest quality single crystal oxides that enable high performance oxide thin films. The oxides are typically used for display and solar cell applications. The insight gained in this program is creating new pathways to higher performance light emitting diodes, displays and solar cells. Additionally, the students in this program are engaged in experimental and theoretical activities in the U.S. and Germany and thus will be exposed to a broad of scientific issues in an international setting.The exploration of oxides from the perspective of semiconductor science and technology offers exciting opportunities for uncovering new physics as well as developing novel devices with unprecedented performance and functionality. There is currently great interest in the exploration and development of semiconducting binary oxides (beta-Ga2O3, In2O3, SnO2, ZnO) as new wide-band-gap electronic materials. When grown as high purity epitaxial films with controlled doping, as carried out for non-oxide semiconductors (e.g., Si, GaAs), they have great potential as a new class of semiconductors (NSF-partner UCSB). In this context, this project addresses a major bottleneck, namely the availability of bulk substrates for homoepitaxy (partners IKZ and HU Berlin). High quality homoepitaxial growth on single crystal substrates provided by our partners IKZ and HU facilitate solutions to outstanding scientific questions for semiconducting oxides including: the origin of unintentional n-type doping; the presence of surface electron accumulation layers; and the development of p-type doping and p-n homojunctions. A strong impact on technology is anticipated: the wide-band-gap oxides that are the focus of the investigation are prime candidates for transparent electronics, high-frequency devices, multifunctional devices, and potentially for light emitters.