Mid-infrared Semiconductor Lasers Based on Intersubband Transitions in the Valence Band of GaAs/AlAs Quantum Cascade Nanostructures
Mid-infrared Semiconductor Lasers Based on Intersubband Transitions in the Valence Band of GaAs/AlAs Quantum Cascade Nanostructures
批准号:
0935899
负责人:
Oana Malis
金额:
$25.34万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2009
资助国家:
美国
项目状态:
已结题
起止时间:
2009-01-01 至 2011-07-31
中文摘要
ECCS-0725384O。马里斯,纽约州立大学宾厄姆分校的智能优点:这个项目将研究一种基于碳掺杂的GaAs/AlAs纳米结构的新型中红外量子级联激光器。与传统的量子级联激光器不同,该器件利用空穴传输和价带内跃迁。主要目的是利用空穴亚带间跃迁的独特光学性质来演示5-10微米范围内的表面发射激光。这种方法将是多管齐下的,既有实验的,也有理论的。孔级联结构将被设计、生长和表征。该项目将侧重于在材料质量问题最小化的良好发展的半导体系统的背景下,加强对空穴子带间跃迁和超快空穴弛豫过程的物理学的理解。然而,所获得的知识也将为红外激光发射在其他材料系统中的前景提供宝贵的见解,尤其是在Si/SiGe、GaN和ZnSe中。这项研究还将促进对分子束外延纳米结构和生长高纯碳掺杂GaAs的基本机制的理解。广泛影响:提出的中红外激光发射的新设备概念预计将对原位和远程痕量气体传感的光谱技术产生重大影响。中红外表面发射激光器将使几个传感器集成在一个芯片上,同时检测几种气体,在空气质量控制、健康监测或爆炸物检测方面的应用立即带来好处。该项目还将为纽约州立大学宾厄姆顿分校的研究生和本科生提供独特的机会,将学术和工业研究环境中的教育、培训和研究结合起来。将特别注意增加科学和工程领域代表性不足群体的机会。教师和研究生将开展外展活动,向高中生和非理科专业的学生以及普通公众介绍材料科学和技术。将开发一门以动手为基础的实验课程,内容涉及纳米科学和工程的基础和实践方面。
英文摘要
ECCS-0725384O. Malis, SUNY BinghamtonIntellectual merit: This project will investigate a new class of mid-infrared quantum cascade lasers based on Carbon-doped GaAs/AlAs nanostructures. Unlike traditional quantum cascade lasers, the proposed devices utilize hole transport and intra-valence band transitions. The major objective is to exploit the unique optical properties of hole intersubband transitions to demonstrate surface-emitting lasing in the 5-10 um range. The approach will be multi-pronged, experimental and theoretical. Hole cascaded structures will be designed, grown, and characterized. The project will focus on enhancing the understanding of the physics of hole intersubband transitions and of ultrafast hole relaxation processes in the context of a well developed semiconductor system where material quality issues are minimized. Nevertheless, the acquired knowledge will also provide invaluable insights into the prospects of infrared laser light emission in other material systems, most notably in Si/SiGe, GaN, and ZnSe. This investigation will also advance the understanding of basic mechanisms involved in molecular beam epitaxy of nanostructures and in growth of high-purity Carbon-doped GaAs.Broader Impact: The proposed new device concept for mid-infrared laser emission is expected to significantly impact spectroscopic techniques for in-situ and remote trace gas sensing. Mid-infrared surface emitting lasers would enable integration of several sensors on a single chip for simultaneous detection of several gasses with immediate benefits for applications in air quality control, health monitoring, or explosive detection. This project will also offer graduate and undergraduate students at SUNY-Binghamton unique opportunities to integrate education, training and research in both the academic and industrial research environments. Particular attention will be given to enhancing the opportunities of under-represented groups in science and engineering. The faculty and graduate students will engage in outreach activities targeted at introducing material science and technology to high-school and non-science major students, as well as to the general public. A hands-on lab-based course on the fundamental and practical aspects of nanoscale science and engineering will be developed.
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Infrared photonics using ferroelectric scandium-aluminum nitride semiconductors
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批准号:2414283
-
项目类别:Continuing Grant
-
资助金额:$55.0万
-
财政年份:2024
-
负责人:Oana Malis
-
依托单位:
Infrared Quantum Materials Based on Scandium-Containing III-Nitrides
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批准号:2004462
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项目类别:Continuing Grant
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资助金额:$43.19万
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财政年份:2020
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负责人:Oana Malis
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依托单位:
Novel Infrared Optical Materials Based on III-Nitride Semiconductors: Growth, Structure and Properties
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批准号:1610893
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项目类别:Continuing Grant
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资助金额:$43.5万
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财政年份:2016
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负责人:Oana Malis
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依托单位:
CAREER: Nonpolar vertical-transport III-nitride devices for near-infrared applications
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批准号:1253720
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项目类别:Standard Grant
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资助金额:$40.0万
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财政年份:2013
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负责人:Oana Malis
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依托单位:
Global Strain-Free III-Nitride Heterostructures: Growth, Structure and Near-Infrared Optical Properties
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批准号:1206919
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项目类别:Continuing Grant
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资助金额:$39.0万
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财政年份:2012
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负责人:Oana Malis
-
依托单位:
Mid-infrared Semiconductor Lasers Based on Intersubband Transitions in the Valence Band of GaAs/AlAs Quantum Cascade Nanostructures
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批准号:0725384
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项目类别:Standard Grant
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资助金额:$30.0万
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财政年份:2007
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负责人:Oana Malis
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依托单位:
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