Integrate high Z and low Z compound semiconductors for 60 keV spectrometry
Integrate high Z and low Z compound semiconductors for 60 keV spectrometry
批准号:
1810507
负责人:
Arion-Xenofon Chatziioannou
金额:
$38.5万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2018
资助国家:
美国
项目状态:
已结题
起止时间:
2018-08-15 至 2022-12-31
中文摘要
非技术:放射性同位素的检测和鉴定对国家安全和医学成像具有重要意义。不同的同位素可以通过它们在放射性衰变过程中发出的伽马射线的能量来相互区分。高效、高分辨率的伽马射线探测需要具有高原子序数(Z)的半导体。然而,这些材料具有较低的带隙,基于这些材料的器件具有很高的电子噪声。在这种探测器的结合区中的高电场显著地增加了这种噪声。因此,精密辐射探测器需要大量的冷却来降低电子噪音。所需的大范围冷却既昂贵又不可靠。研究人员建议在室温下以紧凑的封装实现高能量分辨率的伽马射线探测。这些探测器将集成高Z低带隙半导体和低Z高带隙半导体。高Z材料有效地探测伽马射线,低Z材料在高场区域提供低电子噪声。这种方法利用了这两种材料的相对优势。该团队带来了世界知名的半导体材料生长和伽马射线探测器制造方面的专业知识,以应对与该项目相关的挑战。多学科研究团队在投资于代表性不足的少数族裔研究生和本科生研究人员(包括女性)方面有着既定的记录。这项拟议的工作将成为加州大学洛杉矶分校一个新项目的基础,在该项目中,学生们将参加跨学科的研讨会和实验室之旅。该计划旨在弥合材料科学、电气工程和生物医学物理之间的差距。技术:基本需要紧凑、低功率和高分辨率的辐射探测器,能够在室温附近工作,为民用安全、辐射监视和放射成像应用提供X射线到伽马射线能谱。通过结合世界知名的III-As/Sb结构外延生长和器件制造、传感器件和伽马射线探测方面的专业知识,该项目计划在紧凑的封装中实现对60keV伽马射线的直接探测,能量分辨率为1%。提出了一种新型的高原子序数(Z)伽马射线吸收体与低噪声结区的集成,以构建一种能量敏感的辐射探测器,该探测器将利用两种材料的相对优势,实现低背景噪声的高能量分辨率伽马射线探测。该技术方法的设计和组织是为了实现整合伽马射线探测器结构的概念,并将对对X射线和伽马射线光谱学领域至关重要的材料和设备参数进行全面的实验研究。团队集合了独特的经验和知识组合,以应对与该项目相关的挑战。更广泛的影响在一定程度上来自研究团队的多学科性质,该团队有投资于代表性不足的少数族裔研究生和本科生研究人员(包括女性)的既定记录。这项拟议的工作将成为加州大学洛杉矶分校一个新项目的基础,在该项目中,学生们将参加跨学科的研讨会和实验室之旅,旨在弥合材料科学、电气工程和生物医学物理之间的差距。该奖项反映了NSF的法定使命,并通过使用基金会的智力优势和更广泛的影响审查标准进行评估,被认为值得支持。
英文摘要
Non-Technical:The detection and identification of radioactive isotopes is important for national security and medical imaging. Different isotopes can be distinguished from one another by the energy of gamma rays that they emit during radioactive decay. Efficient, high-resolution detection of gamma rays requires semiconductors with high atomic number (Z). However, these materials have low band-gaps and device based on such materials have high electronic noise. A high electric field in the junction regions of such detectors significantly increases this noise. Precision radiation detectors therefore require significant cooling to reduce electronic noise. The extensive cooling required can be both expensive and unreliable. The investigators propose to achieve gamma-ray detection with high energy resolution in a compact package at room temperature. These detectors will integrate a high-Z low band-gap semiconductor with a low-Z, high band-gap semiconductor. The high-Z material detects gamma rays efficiently and the low-Z material provides low electronic noise in the high field region. This approach exploits the relative benefits of the two materials. The team brings world-renowned expertise in growth of semiconductor materials and fabrication of gamma-ray detectors to bear on the challenges associated with this project. The multidisciplinary research team has an established track record of investing in underrepresented minority graduate students and undergraduate researchers, including women. The proposed work will form the basis for a new program at UCLA in which students take part in cross-disciplinary workshops and laboratory tours. This program aims to bridge the gaps between material science, electrical engineering, and biomedical physics.Technical:A fundamental need exists for compact, low-power and high-resolution radiation detectors that can operate near room temperature to provide X-ray to gamma-ray spectroscopy for civil security, radiation surveillance, and radiological imaging applications. By combining world-renowned expertise in epitaxial growth and device fabrication of III-As/Sb structures, sensing devices, and gamma-ray detection, this project plans to achieve direct detection of 60 keV gamma-rays with energy resolution 1% in a compact package. A novel integration of high atomic number (Z) gamma-ray absorbers with low-noise junction regions is proposed to construct an energy-sensitive radiation detector that will exploit the relative benefits of the two materials, to achieve high energy resolution gamma-ray detection with low background noise. The technical approach is designed and organized to achieve the concept of integrating gamma ray detector structures, and will deliver comprehensive experimental investigations of material and device parameters that are of fundamental importance to the field of X-ray and gamma-ray spectroscopy. A team is brought together with a unique combination of experience and knowledge to bear on the challenges associated with this project. The broader impacts arise in part from the multidisciplinary nature of the research team, which has an established track record of investing in underrepresented minority graduate students and undergraduate researchers, including women. The proposed work will form the basis for a new program at UCLA in which students take part in cross-disciplinary workshops and laboratory tours aimed at bridging the gaps between material science, electrical engineering, and biomedical physics.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(5)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
DOI:
10.1109/jqe.2021.3058356
发表时间:
2021-04
期刊:
IEEE Journal of Quantum Electronics
影响因子:
2.5
作者:
[Jamal Ahmed;S. Xie;B. Liang;Xin Yi;X. Jin;M. Kesaria;J. David;D. Huffaker]
通讯作者:
Jamal Ahmed;S. Xie;B. Liang;Xin Yi;X. Jin;M. Kesaria;J. David;D. Huffaker
DOI:
10.1109/jstqe.2021.3099912
发表时间:
2022-03-01
期刊:
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
影响因子:
4.9
作者:
[Jin, Xiao, Xie, Shiyu, David, John P. R.]
通讯作者:
David, John P. R.
DOI:
10.1002/adom.201900107
发表时间:
2019-03
期刊:
Advanced Optical Materials
影响因子:
9
作者:
[B. Juang;Andrew Chen;D. Ren;B. Liang;D. Prout;A. Chatziioannou;D. Huffaker]
通讯作者:
B. Juang;Andrew Chen;D. Ren;B. Liang;D. Prout;A. Chatziioannou;D. Huffaker
DOI:
10.1049/el.2020.2063
发表时间:
2020-11
期刊:
Electronics Letters
影响因子:
1.1
作者:
[Y. Ji;K. M. Azizur-Rahman;T. Chang;B. Juang;D. Prout;B. Liang;D. Huffaker;A. Chatziioannou]
通讯作者:
Y. Ji;K. M. Azizur-Rahman;T. Chang;B. Juang;D. Prout;B. Liang;D. Huffaker;A. Chatziioannou
Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al 2 O 3 passivation
Al 2 O 3 钝化显着抑制 GaSb/AlAsSb 异质结构的表面泄漏
DOI:
10.7567/1347-4065/ab3909
发表时间:
2019
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[Chen, Andrew, Juang, Bor-Chau, Ren, Dingkun, Liang, Baolai, Prout, David L., Chatziioannou, Arion F., Huffaker, Diana L.]
通讯作者:
Huffaker, Diana L.
国内基金
海外基金
登录
查看更多内容
骨髓微环境中正常造血干/祖细胞新亚群IL7Rα(-)LSK(low)细胞延缓急性髓系白血病进程的作用及机制研究
-
批准号:
-
项目类别:省市级项目
-
资助金额:--
-
批准年份:2025
-
负责人:王震毅
-
依托单位:
MSCEN聚集体抑制CD127low单核细胞铜死亡治疗SLE 的机制研究
-
批准号:
-
项目类别:省市级项目
-
资助金额:--
-
批准年份:2024
-
负责人:耿林玉
-
依托单位:
脐带间充质干细胞微囊联合低能量冲击波治疗神经损伤性ED的机制研究
-
批准号:82371631
-
项目类别:面上项目
-
资助金额:49.00万元
-
批准年份:2023
-
负责人:卢慕峻
-
依托单位:
Ni-20Cr合金梯度纳米结构的低温构筑及其腐蚀行为研究
-
批准号:52301123
-
项目类别:青年科学基金项目
-
资助金额:30.00万元
-
批准年份:2023
-
负责人:郭晓开
-
依托单位:
LIPUS促进微环境巨噬细胞释放CCL2诱导尿道周围平滑肌祖细胞定植与分化的机制研究
-
批准号:82370780
-
项目类别:面上项目
-
资助金额:49.00万元
-
批准年份:2023
-
负责人:夏术阶
-
依托单位:
新型PDL1+CXCR2low中性粒细胞在脉络膜新生血管中的作用及机制研究
-
批准号:82271095
-
项目类别:面上项目
-
资助金额:56万元
-
批准年份:2022
-
负责人:柳夏林
-
依托单位:
CD9+CD55low脂肪前体细胞介导高脂诱导脂肪组织炎症和2型糖尿病的作用和机制研究
-
批准号:82270883
-
项目类别:面上项目
-
资助金额:52万元
-
批准年份:2022
-
负责人:毕艳
-
依托单位:
CD21low/-CD23-B细胞亚群在间质干细胞治疗慢性移植物抗宿主病中的作用机制研究
-
批准号:--
-
项目类别:面上项目
-
资助金额:52万元
-
批准年份:2022
-
负责人:陈小湧
-
依托单位:
探究Msi1+Lgr5neg/low肠道干细胞抵抗辐射并驱动肠上皮再生的新机制
-
批准号:82270588
-
项目类别:面上项目
-
资助金额:52万元
-
批准年份:2022
-
负责人:吕聪
-
依托单位:
m6A去甲基化酶FTO通过稳定BRD9介导表观重塑在HIF2α(low/-)肾透明细胞癌中的作用机制研究
-
批准号:--
-
项目类别:面上项目
-
资助金额:54.7万元
-
批准年份:2021
-
负责人:徐丹枫
-
依托单位: