GRC Defects in Semiconductors: Defect Formation, Characterization, Control and Utilization

该奖项将为从事半导体缺陷研究的学生、早期职业研究人员和科学界代表性不足的部门提供部分支持，以参加2020年半导体缺陷戈登研究会议和戈登研究研讨会。会议和研讨会将于2020年8月15日至21日在新罕布什尔州新伦敦的科尔比-索耶学院举行。半导体缺陷在量子传感和量子信息科学中发挥着越来越重要的作用，会议计划充分证明了这一点，会议专门讨论了。例如，使用NV中心的金刚石器件中的单光子源和磁强计。除了会议本身，研究生和博士后研究人员还可以从为期两天的戈登研究研讨会中受益，这是由他们的同龄人设计的，也是为他们设计的。参加GRS和GRC可以为年轻科学家提供一个独特的机会，积极参与这一重要的研究领域，以促进当前和未来量子技术的发展。培养未来的量子劳动力最近被认为是美国科学政策的一个重要战略目标。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

This award will provide partial support for students, early career researchers and under-represented sectors of the scientific community that are engaged in research related to defects in semiconductors, to attend the 2020 Defects in Semiconductors Gordon Research Conference and Gordon Research Seminar. The Conference and Seminar will take place August 15 to 21, 2020, at Colby-Sawyer College, New London, New Hampshire. Defects in semiconductors are playing an increasingly important role in quantum sensing and quantum information science, and the conference program shows ample evidence of this, with sessions devoted to. e.g., single photon sources and magnetometry in diamond devices using NV centers. In addition to the conference itself, graduate students and postdoctoral researchers can benefit from the two-day Gordon Research Seminar, designed by and for their peers. Attendance at both the GRS and GRC can provide young scientists with a unique opportunity to actively engage in this important area of research for the development of present and future quantum technologies. The training of a future quantum workforce has been recently recognized as an important strategic goal for U.S. science policy.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.