AlInN-GaN Vertical Power Electronic Devices

非技术：电力电子需要能够承受高电压和高电流的材料。超宽带隙半导体有潜力完成这一角色。与吸收可见光和近红外光的传统半导体不同，超宽带隙半导体对可见光是透明的，并吸收紫外线。这些特性也允许它们用于在高温和高压下工作的设备，这对电力电子设备至关重要。本项目研究使用超宽带隙半导体氮化铝铟（AlInN）制造先进电力电子器件的方法。AlInN与氮化镓结合使用，具有生产高性能电力电子器件的潜力。基于alin的功率器件将导致电气系统的尺寸、重量和功率的减小。在这个项目中创造的动力设备将对国家经济产生积极影响，并提高能源效率。研究生将接受先进半导体材料合成、材料与器件物理、器件制造与设计等基本领域的培训。本课程的主题将整合到研究生和本科课程中，以拓宽学生在实验室之外的教育经验。他们还将被纳入K-12教育和外展活动。技术：该计划探索氮化铝铟/氮化镓（AlInN/GaN）用于垂直电力电子器件，其性能优于基于GaN的最先进技术。AlInN属于超宽带隙半导体，具有理想的器件特性，如晶格匹配衬底（GaN），高电子迁移率，n型和p型掺杂，有用的GaN/AlInN异质界面，以及创建天然氧化物的能力。该项目有两个重点。首先，通过推进AlInN的最新发展，研究AlInN作为功率二极管的漂移层；设计新型边缘终止结构；制造和测试alin功率二极管；测量基本性质，比如撞击电离。二是通过研究AlInN原生氧化物的绝缘特性和电荷特性，构建基于AlInN的结场效应晶体管（jfet）和金属氧化物半导体场效应晶体管（mosfet）等3端功率器件；使用氧化物创建新颖的器件架构；利用计算机辅助设计（TCAD）建模技术指导设备决策；制造和测试晶体管。该计划的广泛目标是为基于alin的功率器件创建实验方法，并深入了解alin及其器件的物理特性。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

Nontechnical:Power electronics require materials that can withstand high voltages and currents. Ultrawide bandgap semiconductors have the potential to fulfill this role. Unlike conventional semiconductors that absorb visible and near infrared light, ultrawide bandgap semiconductors are transparent to visible light and absorb in the ultraviolet. These properties also allow them to be used in devices that operate at high temperatures and voltages, which is crucial for power electronics. This project researches methods to create advanced power electronics using an ultrawide bandgap semiconductor, aluminum indium nitride (AlInN). AlInN, used in combination with gallium nitride, has the potential to produce high performance power electronic devices. AlInN-based power devices will lead to a reduction in the size, weight, and power of electrical systems. Power devices created in this program will positively impact the nation's economy and increase energy efficiency. Graduate students will be trained in the essential areas of advanced semiconductor materials synthesis, materials and device physics, and device fabrication and design. The topics of this program will be integrated into graduate and undergraduate courses to broaden students' educational experience beyond the laboratory. They will also be incorporated into K-12 education and outreach activities.Technical:This program explores aluminum indium nitride/gallium nitride (AlInN/GaN) for vertical power electronic devices with superior performance over state-of-the-art technologies based on GaN. AlInN is in the ultra-wide bandgap class of semiconductors with desirable device properties such as a lattice-matched substrate (GaN), high electron mobility, n- and p-type doping, useful GaN/AlInN heterointerfaces, and the ability to create a native oxide. The program has two thrusts. The first is to investigate AlInN as drift layers for power diodes by advancing the state-of-the-art growth of AlInN; designing novel edge termination structures; fabricating and testing AlInN power diodes; and measuring fundamental properties such as impact ionization. The second is to create 3-terminal AlInN-based power devices such as junction field-effect transistors (JFETs) and metal oxide semiconductor field-effect transistors (MOSFETs) by investigating the insulating and charge properties of the AlInN native oxide; using the oxide to create novel device architectures; using technology computer-aided design (TCAD) modeling to guide device decisions; and fabricating and testing transistors. The program has broad goals of creating experimental methods for AlInN-based power devices and gain a deep understanding of the physics of AlInN and its devices.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.