Spin injection and spin manipulation in Silicon-Germanium heterostructures with ferromagnetic Mn5Si3Cx- and Mn5Ge3Cx-electrodes

C掺杂的Mn5Si3-和Mn5Ge3合金的居里温度分别为350K和450K，适合用作硅和锗异质结中的铁磁电极，用于潜在的CMOS兼容自旋电子器件。因此，这个提议旨在研究通过Mn5Si3-和Mn5Ge3-接触在Ge和Si异质结中的自旋注入。我们计划通过Hanle效应来研究自旋注入的电学检测，以及通过检测自旋极化载流子复合产生的圆偏振光来研究自旋注入的光学检测。我们打算利用栅电极产生的电场来进行自旋操纵的研究。最后，我们计划研究自旋Seebeck效应在Si/Ge材料系统自旋热电子学中的可能应用。这项跨学科的项目计划由邻近地点的两个小组(斯图加特大学半导体工程研究所(IHT-US)和卡尔斯鲁厄理工学院物理研究所(PI-KIT))进行，他们在半导体技术和工程(IHT-US)以及薄膜电子传输(PI-KIT)方面拥有必要的专业知识。

This proposal is aimed at demonstrating spin injection, spin detection and spin manipulation in a CMOS-compatible device, and thus, demonstrating the basic functionality which is necessary to realize spintronic devices.The C-doped Mn5Si3- and Mn5Ge3 alloys have Curie temperatures of 350 K and 450 K, respectively, and are suitable for use as ferromagnetic electrodes in Si- and Ge-based heterostructures for potentially CMOS-compatible spintronic devices. This proposal, therefore, aims at investigating spin injection in Ge- and Si-heterostructures via Mn5Si3- and Mn5Ge3-contacts. We plan to investigate the electrical detection of spin injection by means of the Hanle effect as well as optical detection of spin injection by detecting circularly polarized light that results from recombination of spin-polarized charge carriers. We intend to carry out research on spin manipulation by means of electric fields generated by gate electrodes. Finally, we plan to investigate the spin Seebeck effect for possible applications in spin caloritronics in the Si/Ge material system.This interdisciplinary project is intended to be carried out by two groups at neighboring locations (Institute for Semiconductor Engineering, University of Stuttgart (IHT-US), and Physikalisches Institut, Karlsruhe Institute of Technology (PI-KIT)) that have the necessary expertise in semiconductor technology and engineering (IHT-US) as well as electronic transport in thin films (PI-KIT).