Nanowire lasers integrated into silicon-on-insulator photonic circuits

本提案旨在利用申请人最近取得的进展，选择性地将III-V半导体纳米级激光器集成到硅基纳米光子电路上，并探索它们与光子环境和彼此之间的耦合。我们将专注于基于带隙可调谐（In）GaAs-(In)AlAs的近红外（~1.2-1.55µm）纳米线，并通过利用纳米线内的量子限制异质结构、应变和掺杂来定制光学增益和载流子动力学。影响纳米线激光器增益和载流子动力学的因素，如时间/频率相关的载流子弛豫、增益恢复、导通时间等，以及非辐射俄歇复合，将利用超快泵浦探针光谱学和阈值特性的温度相关测量，结合建模来探索。通过将多个纳米线激光器集成到原型绝缘体上硅（SOI）光子电路中，我们将进一步研究激光器与底层电路及其环境的光耦合。最终，我们将开发自注入锁定的路线，探索单个纳米线激光器之间的相互作用现象，并为电信频段中原型集成光子电路的光开关开辟道路。

This proposal aims to capitalize on recent advances made by the applicants to site-selectively integrate III-V semiconductor nanoscale lasers onto silicon based nanophotonic circuits and explore their coupling to the photonic environment and each other. We will focus on band-gap tunable (In)GaAs-(In)AlAs based nanowires emitting in the near-infrared (~1.2-1.55 µm) and tailor the optical gain and carrier dynamics by exploiting quantum confined heterostructures, strain and doping within the nanowire. Factors influencing the gain and carrier dynamics of the nanowire lasers such as the time-/frequency dependent carrier relaxation, gain recovery, turn-on time, etc. and non-radiative Auger recombination will be explored using ultrafast pump-probe optical spectroscopy and temperature-dependent measurements of the threshold characteristics, in combination with modelling. By integrating multiple nanowire lasers onto prototype silicon-on-insulator (SOI) photonic circuits we will further investigate the optical coupling of the lasers to the underlying circuit and their environment. Ultimately, we will develop routes towards self-injection locking, explore interaction phenomena between individual nanowire lasers and open the way to optical switching in prototype integrated photonic circuits in the telecoms bands.