Formation of 3-dimensional (3D) Si quantum dot arrays using block copolymer self-assembly and its application to 3D quantum dot solar cell

我们研究了多隧道结PIN型太阳电池衬底的形成，以及三维（3D）量子点太阳电池衬底的极细圆柱结构的掩膜和刻蚀。在前者中，我们提出了3D量子点太阳能电池的结构和使用LP-CVD（低压化学气相沉积），热氧化和杂质扩散的制备工艺。在制作完成后，我们对太阳能电池的性能进行了评估，并在LP-CVD SiO2层中获得了厚度为1nm的自适应结构。此外，我们还获得了用于3D太阳能电池的3- pin多层结构衬底。在后者中，我们开发了利用PS-PDMS嵌段共聚物自组装形成非常精细的点图案，利用薄硅层和碳层的多抗蚀剂方法将其转移到碳点图案用于蚀刻掩膜，并将Si衬底的反应蚀刻（RIE）作为具有多隧道结PIN型太阳能电池的非常精细的圆柱体。

We studied a formation of multi-tunnel junction PIN type solar cell substrate and masking and etching of very fine cylinder structure of the substrate for three-dimensional (3D) quantum dot solar cell. In the former, we proposed structure of 3D quantum dot solar cell and process for its fabrication using LP-CVD (Low pressure chemical vapor deposition), thermal oxidation and impurity diffusion. After the fabrications, we evaluated the solar cell properties and obtained adaptive structure with 1nm-thickness in LP-CVD SiO2 layer for tunneling current. Furthermore, we obtained the substrate with 3-PIN-multi-layers structure for 3D solar cell. In the latter, we developed very fine dot pattern formation using self-assembly with PS-PDMS block copolymer, multi-resist method with thin Si layer and carbon layer to transfer it to carbon dot pattern for etching mask, and reactive-ion-etching (RIE) of the Si substrate as very fine cylinders with multi-tunnel junction PIN type solar cell.