ウルツ鉱型半導体の力学特性に及ぼす光環境効果の実験的計測とメカニズム解明

该项目旨在阐明光如何影响纤锌矿半导体的机械性能。许多先进的半导体化合物，如GaN和ZnO，具有纤锌矿结构，由两个独立的六边形紧密排列的亚晶格组成。FY2022，我们的研究主要集中在第三代半导体材料代表纤锌矿ZnO上。采用光压痕技术，即可控光照系统下的原位纳米压痕实验，评估不同光照条件下纳米尺度的力学响应。对两种不同取向的ZnO单晶进行了三种类型的光压痕实验。采用低负荷压痕突入试验研究了光对位错成核的影响。采用中载荷准压痕试验验证了不同取向的光硬化效果。通过高载荷压痕蠕变试验，研究了光对不同滑移面位错增殖和运动的影响。结果表明，光对位错成核事件的影响较小，但对位错运动的影响较大。

This project aims to elucidate how light affects the mechanical properties of wurtzite semiconductors. Many advanced semiconductor compounds, such as GaN and ZnO, possess wurtzite structure, which consists of two individual hexagonal close-packed sublattices. In FY2022, our studies mainly focused on wurtzite ZnO, a representative third-generation semiconductor material. Photoindentation technique, i.e., in-situ nanoindentation experiments with a controllable light illumination system, was adopted to evaluate the mechanical responses at the nanoscale under different light conditions. Three types of photoindentation experiments were applied on two ZnO single crystals with different orientations. Low-load indentation pop-in tests were performed to investigate the light effects on dislocation nucleation. Middle-load quasi-indentation tests were conducted to verify the photo-hardening effects of different orientations. High-load indentation creep tests were carried out to study the influence of light on dislocation multiplication and motion along different slip planes. It was found that light only shows a slight influence on the dislocation nucleation event, but significantly affects dislocation motion.