Reactive ion etching

对于所要求的器件，我们的目标是制造用于量子光学应用的纳米结构。近年来，费丁教授的研究小组发现，半导体量子点是产生纠缠光子对的极好来源。作为迈向可扩展和竞争性光子源的下一步，这些量子点将嵌入纳米结构中。通过制作光学微腔(例如圆形布拉格光栅)，可以显著提高发射光子的质量。利用光子晶体可以研究光子与光纤的有效耦合。此外，量子点将被集成到光子波导网络中，例如在单个微芯片上实现多光子纠缠。与微结构压电材料相结合，发射的光子的性质可以确定地进行调节。所有这些应用都需要纳米范围内的高精度结构(结构尺寸小于50 nm)，而光刻和湿法化学刻蚀工艺是不够的。为此，一方面，需要一种旨在在抗蚀剂中产生纳米结构图案的电子光刻系统。干法刻蚀系统(RIE反应离子刻蚀)旨在将结构转移到半导体材料中。RIE工艺参数的精确调整允许对刻蚀纳米结构(深度、各向异性、表面粗糙度)进行精确控制，从而确保发射光子的质量。

With the requested devices we aim at fabricating nanostructures for quantum optics applications. The group of Prof. Fei Ding has shown in recent years that semiconductor quantum dots are an excellent source of entangled photons pairs. As a next step towards scalable and competitive photon sources, these quantum dots will be embedded in nanostructures. By making optical microcavities (e.g., circular Bragg grating), the quality of the emitted photons should be significantly increased. By using photonic crystals the efficient photon coupling into optical fibers can be investigated. Furthermore, quantum dots are to be integrated into photonic waveguide networks, e.g. to realize multiphoton entanglement on a single microchip. In combination with microstructured piezoelectric materials, the properties of the emitted photons can be tuned deterministically. All these applications require high-precision structures in the nanometer range (structure sizes below 50 nm), for which photolithography and wet-chemical etching processes are not sufficient. For this reason, on the one hand, an electron lithography system is requested which is intended to produce nanostructure pattern in resist. A dry etching system (RIE reactive ion etching) is intended to transfer the structures into the semiconductor material. Precise adjustment of the RIE process parameters allows precise control of the etched nanostructure (depth, anisotropy, surface roughness), which ensures the quality of the emitted photons.