Study on the miniature Opto-Electric Thin Film Transformer

本研究针对微机电系统的光电源进行研究。为了克服多层螺旋线圈形成过程中不可避免的不均匀问题，我们新开发了一种利用蒸镀Al薄膜的部分阳极氧化来制造基本平坦的螺旋线圈的方法。我们已经发现了如何检查阳极氧化的终点的问题，但是我们已经通过同时形成与真实的监测线圈相邻的监测线圈并检查通过该监测线圈的漏电流来克服这个问题。并提出了双层薄膜线圈的制作方法和用这些线圈组合制作Transformer的方法。我们放弃了实现5V输出Transformer的第一个目标的进一步研究，因为我们注意到多层线圈和多层Transformer的成品率会随着层的堆积而变差，并提出了一种新的制造多层线圈和多层变压器的方法。至于第二个目标，高效率的光电池，我们已经提出了一种新的方法来耦合的光二极管通过光纤有效地光电池，并已证明，但仍需要进一步的研究。这个想法是，光电池的p-n结平面平行于沿沿着该结平面传播的830 mm的入射光形成，因为830 mm的光在Si中具有约15 μ m的相对长的吸收长度。我在1994年申请了科学研究补助金，以建立这项研究。对于第三个目标，即最佳操作条件和操作模拟，我们用PSPICE模拟器进行了分析。第四个目标是研制高速低通态电阻晶体管，用于开关由直流光产生的直流电流，我们提出了一种新的肖特基隧道晶体管，并证明了它的基本特性。该结构

This research aims for the optical power supply to the Micro-Electro-Mechanical Systems. In order to overcome the unavoidable uneven problems arisen at the formation of the multilayr spiral coil, we have newly developed the fabrication method of the essentially flat spiral coil by means of the partial anodic oxidation of the evaporated AI thin film. We have found the problem how to check the end point of the anodic oxidation, but we have overcome this problem by means of simultaneous formation of the monitor coil adjacent to the real one and check the leakage current through this monitor coil. We have also developed the methods how to fabricate the double layr thin film coil and the transformer by the combination of these coils. We have given up further investigation to achieve the first aim of 5 V output transformer, because we have noticed the yield will be getting worse as pilling up the layrs, and have proposed a new method to make the multilayr coil and multilayr transformer. As to the second aim for high efficiency photo-cell, we have proposed a new method to couple the light of the LD through the optical fiber efficiently to the photo-cell, and have demonstrated although further investigation is still needed. This idea is that the p-n junction plane of the photo-cell is formed parallel to the incident light of 830mm which is absorbed traveling along this junction plane, because the 830mm light has relatively long absorption length of about 15mum in Si. I have made an application of Grant-in-Aid for Scientiffic Research in 1994 for establishment of this research. As to the third aim for optimum operation conditions and operating simulations, we have analyzed by using the PSPICE simulator. As to the fourth aim for the development of the high speed and low on-state resistance transistor for switching the DC current arisen by the DC light, we have proposed a new Schottky tunnel transistor and its fundamental characteristics are demonstrated. The structure of thi