Synthesis of Carbon Nanotubes with Long Length and High Density and its Application to Nanodevices
Synthesis of Carbon Nanotubes with Long Length and High Density and its Application to Nanodevices
批准号:
16206004
负责人:
OURA Kenjiro
金额:
$32.2万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2004
资助国家:
日本
项目状态:
已结题
起止时间:
2004 至 2005
中文摘要
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英文摘要
Carbon nanotubes (CNTs) have great interesting properties, which make CNTs and extraordinary candidate material for many applications. For example, supercapacitors and sensors for ultrasensitive detection fo bio or organic molecules have been proposed. To realize these devices using CNTs, it is indispensable to control the morphorogy of CNTs. So far, long CNTs have been synthesized by means of thermal chemical vapor deposition. Vertical alignment of CNTs has been achieved by the plasma enhanced chemical vapor deposition. However, a method for controlling both length and alignment of CNTs has not been realized. Moreover, as for synthesis of CNTs with high density, although the CNT density up to 10^9/cm^2 was synthesized, CNTs with more than 10^<10>/cm^2 of the density have not been reported. Vertically aligned CNTs with long length and high density have a promising morphology for the electrochemical devices and the sensors for ultrasensitive detection of bio or organic molecules that require a large effective surface area.In this project, we have developed the method for synthesis of CNTs with long length and high density towards nanodevices. The new findings worthy of special mention are as follows.A test device of electrochemical double layer capacitors (EDLC) incorporating the vertically aligned CNTs with long and high density, which are successfully synthesized using Fe/Al multilayer catalyst films by thermal chemical deposition, is fabricated as electrodes. The EDLC device exhibited a stable charge/discharge characteristic and the specific capacitance did not deteriorate after 10000 cycles.
期刊论文(14)
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Synthesis of Aligned Carbon Nanotubes by Inductively Coupled Plasma Chemical Vapor Deposition
电感耦合等离子体化学气相沉积法合成定向碳纳米管
DOI:
--
发表时间:
2005
期刊:
J.Plasma Fusion Res. (in Japanese) 81, No.9
影响因子:
--
作者:
[S.Honda, K.Oura, M.Katayama]
通讯作者:
M.Katayama
Carbon Nanostructures Grown on Graphite Substrates without Catalyst by Pulsed Laser Deposition
无催化剂脉冲激光沉积在石墨基底上生长碳纳米结构
DOI:
--
发表时间:
2006
期刊:
Japanese Journal of Applied Physics Vol. 45,No.4A
影响因子:
--
作者:
[K. Miyamoto, ed. al., Shin-ichi Honda 他4名]
通讯作者:
Shin-ichi Honda 他4名
Ultra-Low-Threshold Field Electron Emission from Pillar Array of Aligned Carbon Nanotube Bundles
定向碳纳米管束柱阵列的超低阈值场电子发射
DOI:
--
发表时间:
2004
期刊:
Jpn.J.Appl.Phys. 43, Part 2, No.6B, Express Letter
影响因子:
--
作者:
[M.Katayama, K.-Y.Lee, S.Honda, T.Hirao, K.Oura]
通讯作者:
K.Oura
Synthesis of randomly oriented carbon nanotubes on SiO_2 substrates by thermal chemical vapor deposition toward field electron emitters
场电子发射器热化学气相沉积法在 SiO_2 基底上合成随机取向碳纳米管
DOI:
--
发表时间:
2004
期刊:
Thin Solid Films 464-465
影响因子:
--
作者:
[新谷 亮, 君塚信夫, Kenjiro Oura 他10名]
通讯作者:
Kenjiro Oura 他10名
Synthesis of Randomly Oriented Carbon Nanotubes on SiO_2 Substrates by Thermal Chemical Vapor Deposition towards Field Electron Emitters
场电子发射体热化学气相沉积法在SiO_2基底上合成随机取向碳纳米管
DOI:
--
发表时间:
2004
期刊:
Thin Solid Films 464-465
影响因子:
--
作者:
[田中慎一, 菅野誉士, 川合知二(分担執筆), Winadda Wongwiriyapan, Takashi Ikuno, Katsunori Aoki, Chih-Wei Chang, Takashi Ikuno, Takashi Ikuno, Takashi Ikuno, Takashi Ikuno, Takashi Ikuno, Winadda Wongwiriyapan, Shinya Yoshimoto, Masaru Kishida, Winadda Wongwiriyapan, Takashi Ikuno, Takashi Ikuno, Rei Hobara, Shin-ichi Honda]
通讯作者:
Shin-ichi Honda
共 11 条
CONTROL OF CARBON NANOTUBE GROWTH USING SELF-ORGANIZED CATALYST NANOCLUSTERS AND ITS APPLICATION TO NANODEVICES
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批准号:14205010
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$35.19万
-
财政年份:2002
-
负责人:OURA Kenjiro
-
依托单位:
Study on Growth Mechanism of Carbon Nanotubes Grown Using Self-Organized Catalyst Nanoclusters
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批准号:13355003
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$33.95万
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财政年份:2001
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负责人:OURA Kenjiro
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依托单位:
Development of Ion Scattering and Recoiling Spectroscopy for In Situ Monitoring of Semiconductor Surface Processes in Gas Phase Atmosphere
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批准号:11305006
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$23.64万
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财政年份:1999
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负责人:OURA Kenjiro
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依托单位:
Microscopic Analysis of Surface Hydrogen and its Application to Nano-Fabrication Techniques
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批准号:10355002
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项目类别:Grant-in-Aid for Scientific Research (A).
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资助金额:$22.72万
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财政年份:1998
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负责人:OURA Kenjiro
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依托单位:
Surface Modification of Hydrogen-Terminated Silicon Substrate using Extra-Low Energy Electron Beam
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批准号:09450017
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.05万
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财政年份:1997
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负责人:OURA Kenjiro
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依托单位:
Joint Study on Hydrogen-Mediated Epitaxy
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批准号:08044146
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$8.51万
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财政年份:1996
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负责人:OURA Kenjiro
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依托单位:
Developement of new hydrogen analysis method by combining classical methods and its application to the H/Si systems
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批准号:08555009
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$13.06万
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财政年份:1996
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负责人:OURA Kenjiro
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依托单位:
Ecology and Dynamics of Hydrogen at Semiconductor Surface
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批准号:07305049
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$3.07万
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财政年份:1995
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负责人:OURA Kenjiro
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依托单位:
Physics of Hetero-Epitaxial Growth onto the hydrogen terminated Si surface under the low temperature condition
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批准号:06402025
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$22.91万
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财政年份:1994
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负责人:OURA Kenjiro
-
依托单位:
国内基金
海外基金
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(k,6)-fullerene图与超立方图的匹配强迫和反强迫问题
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批准号:11901458
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项目类别:青年科学基金项目
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资助金额:24.1万元
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批准年份:2019
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负责人:石玲娟
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依托单位:
Fullerene 两亲分子有序自聚集体及聚集体演变
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批准号:20243007
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项目类别:专项基金项目
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资助金额:7.0万元
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批准年份:2002
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负责人:郝京诚
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依托单位:
Fullerene[60]含能材料及储氢材料的制备研究
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批准号:50272069
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项目类别:面上项目
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资助金额:21.0万元
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批准年份:2002
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负责人:王乃兴
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依托单位:
Fullerene的磁学性质研究
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批准号:19404003
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项目类别:青年科学基金项目
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资助金额:4.0万元
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批准年份:1994
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负责人:姜宗福
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依托单位:
C60,C70等Fullerene材料电子结构的理论研究
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批准号:19274012
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项目类别:面上项目
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资助金额:4.2万元
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批准年份:1992
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负责人:陆栋
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依托单位:
碳fullerene的高压性质研究
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批准号:59282024
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项目类别:专项基金项目
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资助金额:6.0万元
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批准年份:1992
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负责人:杨海滨
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依托单位: