Research of Multiple-Input and Multiple-Output Functional Devices by Means of Nanodot Array

利用纳米点阵列，提出了一种具有多输出和多输出的柔性逻辑器件。我们首先通过仿真证实了其作为柔性逻辑器件的工作原理。然后，我们实际制造了硅纳米点阵列器件，并展示了传统器件从未具有的更高功能。此外，我们还开发了金属纳米点阵列形成技术，以实现更小的纳米点。考虑单电子随机隧穿的仿真为了验证纳米点阵列器件作为柔性逻辑器件的基本工作原理，建立了蒙特卡罗仿真器。我们澄清了该器件作为一个多输入逻辑门工作，其功能可以通过控制门电压来改变。硅纳米点阵列器件的制备及其电学特性评价采用传统的CMOS工艺制备硅纳米点阵列器件，其关键工艺是电子束刻蚀、硅的热氧化和硅的热氧化。我们制作了2x2纳米点阵列，并连接了两个小的输入门，这些输入门与阵列中的纳米点电容耦合。最后，我们在器件顶部附加了一个大的控制栅极，以便与所有纳米点耦合。我们通过改变控制门电压实现了高功能，其中我们可以获得所有六个重要的双输入逻辑功能。我们还实现了作为多输入多输出设备进行操作的可能性，这是使用传统设备无法实现的。金属纳米点阵列的形成我们研究了获得小于10纳米的小金属纳米点阵列的制造技术。我们还研究了使用铁磁金属点的阵列。该器件有望成为一个自旋相关的隧穿器件，其中隧穿概率由点之间的耦合或栅极电压改变，这可能使我们能够使用新的附加功能。我们实现了具有几个纳米点尺寸的二维金属纳米点阵列。少

We proposed a new flexible logic device which has multi-outputs and multi-outputs by means of a nanodot array. We first confirmed the operation principle as a flexible logic device by simulation. Then, we actually fabricated Si nanodot-array devices, and demonstrated the higher functionalities that conventional devices have never had. In addition, we developed the metal-nanodot-array-formation techniques in order to achieve smaller nanodots.1. Simulation taking account of stochastic tunneling of single electronWe built a Monte-Carlo simulator in order to confirm the basic operation of the nanodot-array device as a flexible logic device.We clarified that the device operates as a multi-input logic gate whose function can be changed by the control gate voltage.2. Si nanodot-array device fabrication and the evaluation of their electrical characteristicsWe fabricated Si nanodot-array devices using conventional CMOS fabrication technology, in which the key processes are electron-beam lithogr … More aphy and thermal oxidation of Si. We made 2x2 nanodot arrays and attached two small input gates which coupled capacitively with nanodots in the array. Finally, we attached a big control gate on top of the device so as to be coupled with all the nanodots. We achieved the high functionality in which we can obtain all six important two-input logic functions by changing the control-gate voltage. We also achieved a possibility of an operation as a multi-input and multi-output device, which cannot be attained by the use of conventional devices.3. Metal-nanodot-array formationWe investigated fabrication technologies for getting small metal nanodot arrays which have sub-ten-nanometer dot sizes. We also investigated the arrays which use ferromagnetic metal dots. The device is expected as a spin-dependent tunneling device, in which the tunneling probability is changed by the coupling among the dots or gate voltage, which may enable us to use a new additional functionality. We achieved two-dimensional metal nanodot arrays which have a few nanometer-dot sizes. Less