Reaction Dynamics of Atomic Hydrogen with H-terminated Si Surfaces
Reaction Dynamics of Atomic Hydrogen with H-terminated Si Surfaces
批准号:
14350022
负责人:
NAMIKI Akira
金额:
$6.98万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2002
资助国家:
日本
项目状态:
已结题
起止时间:
2002 至 2004
中文摘要
我们的研究目的是研究h诱导表面D附着原子在Si(100)表面上的吸附动力学。表面数据的提取途径有两种:一种是直接提取(ABS),另一种是吸附诱导解吸(AID)。实验结果表明:(1)ABS和AID反应途径解吸分子的角度分布。解吸产率的角分布在两种路径的法向上都有最大值。利用LEPS势的模拟可以很好地解释结果。这篇文章已经准备好作为论文提交给期刊。(2)采用剪切h束技术研究了AID通道中D_2的解吸。截h梁宽度为1.5 s,持续时间为3 s。ABS通道HD解吸对入射H脉冲的响应速度快,表明吸附反应是直接的。另一方面,D_2在AID途径上的解吸不表现出明显的变化,不仅表现为类似的快速解吸,而且表现为延迟解吸。快速脱附通道被理解为由于局部形成的1x1二氢化物相坍塌成原始的3x1二氢化物相时发生的分子发射。发表了一篇论文。(3)进一步采用短h束研究了AID通道中D_2的解吸。截h梁宽度为0.5 s,持续时间为10 s。ABS通道HD解吸对入射H脉冲的响应速度快,表明抽吸反应是直接的。另一方面,AID途径的D_2解吸表现为多组分,其寿命分别为0.05、0.8和30 s。最快的解吸通道被认为是由于局部形成的1x1二氢化物相坍塌成原来的3x1二氢化物相时发生的分子发射。第二快的路径被认为是由于在H照射下形成3x1二氢化物相时的分子发射。第三种组分归因于过量的3x1二氢化物相被破坏时的分子发射通道。一篇论文已提交给Surf face Science。少
英文摘要
Our Aim of the research is to investigate the dynamics of H-induced abstraction of surface D adatoms on the Si(100) surfaces. There are two kinds of abtraction paths : one is direct abstraction (ABS) and the other is adsorption-induced-desorption(AID) of surfaced adatams. From experiments w e clarified following things :(1)Angular distribution of molecules desorbed along ABS and AID reaction pathways.The angular distributions of desorption yields show a maximum at the normal direction for both paths. Results were well explained by the simulation employing LEPS potential. This has been prepared to be submitted to a journal as a paper.(2)D_2 desorptions along the AID channel were studied by means of a chopped H-beam technique. The width of the chopped-H beam was 1.5 s and duration was 3 s. The HD desorption along the ABS channel showed a quick response to the incident H pulse, suggesting the abstraction reaction is direct. On the other hand, D_2 desorption along the AID pathway showed no … More t only a similar quick path but also a delayed path. The fast desorption channel was understood as due to molecular emissions that occur when locally formed 1x1 dihydride phases collap into the original 3x1 dihydride phases. A paper was published (J.Chem.Phys.121,3221(2004))(3)D_2 desorptions along the AID channel were studied by employing further shortned H-beam. The width of the chopped-H beam was 0.5 s and duration was 10 s. The HD desorption along the ABS channel showed a quick response to the incident H pulse, suggesting abstraction reaction is direct. On the other hand, D_2 desorption along the AID pathway showed multi components chracterized with 0.05,0.8 and 30 s lifetimes. The fastest desorption channel was understood as due to molecular emissions that occur when locally formed 1x1 dihydride phases collap into the original 3x1 dihydride phases. The second fastest path was understood as due to molecular emission when 3x1 dihydride phases are formed during H irradiation. The third component was attributed to the molecular emission channel when the excess 3x1 dihydride phases are destroyed. Apaper has been submitted to Surf face Science. Less
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T.Sagara, T.Kuga, et al.: "Translational Heating of D2 Molecules Thermally Desorbed from Si(100) and Ge(100) Surfaces"Phys. Rev. Letter. 89・8. 86101-1-86101-4 (2002)
T.Sagara、T.Kuga 等:“从 Si(100) 和 Ge(100) 表面热脱附的 D2 分子的平移加热”Phys Rev. Letter 86101-1-86101-4。 2002)
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Coverage dependent desorption dynamics of deuterium on Si(100) surfaces : Interpretation with a diffusion-promoted desorption model
Si(100) 表面上氘的覆盖依赖解吸动力学:用扩散促进解吸模型解释
DOI:
--
发表时间:
2005
期刊:
J.Chem.Phys. 122
影响因子:
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作者:
[T.Matsuno, T.Niida, H.Tsurumaki, A.Namiki]
通讯作者:
A.Namiki
T.Shibataka, et al.: "D_2 reactions on Si(100) surfaces : Adsorption and desorption dynamics"Physical Raview. B68. 113307-1-113307-2 (2003)
T.Shibataka 等人:“Si(100) 表面上的 D_2 反应:吸附和解吸动力学”Physical Raview。
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F.Rahman, et al.: "Oxygen atom-induced D_2 and D_2O desorption on D/Si(111) surfaces"Applied Surface Science. 220. 1-6 (2003)
F.Rahman 等人:“D/Si(111) 表面上氧原子诱导的 D_2 和 D_2O 解吸”应用表面科学。
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作者:
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通讯作者:
Coverage dependent desorption dynamics of deuterium on Si(100) surfaces : Interpretation with a diffusion-promoted desorption mode 1
Si(100) 表面上氘的覆盖依赖解吸动力学:用扩散促进解吸模式 1 进行解释
DOI:
--
发表时间:
2005
期刊:
The Journal of Chemical Physics 122
影响因子:
--
作者:
[T.Matsuno, T.Niida, H.Tsurumaki, A.Namiki]
通讯作者:
A.Namiki
共 10 条
Production of polarized atomic hydrogen beam and its application to spin-selected Si surface reaction
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批准号:09450020
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$3.2万
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财政年份:1997
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负责人:NAMIKI Akira
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依托单位:
A new approach to the device processing by means of supersonic molecular and radical beams
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批准号:08555008
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$7.04万
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财政年份:1996
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负责人:NAMIKI Akira
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依托单位:
Lazer spectroscopic study on vibrutional excitation of NO on alkalated Si surfaces.
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批准号:02640339
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.34万
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财政年份:1990
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负责人:NAMIKI Akira
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依托单位:
海外基金