Development of Harmless Disposal System of Fluoride and Chloride Gases by Chemical Reaction with Metal Oxide
Development of Harmless Disposal System of Fluoride and Chloride Gases by Chemical Reaction with Metal Oxide
批准号:
12555285
负责人:
SHIBATA Junji
金额:
$5.63万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2001
中文摘要
开发了NF_3、CF_4、BC1_3等含氟、氯化物气体无害化的新工艺,建立了材料先进工艺中有毒气体脱除的新理念。氟化物气体是半导体制造过程中使用的有毒特殊气体,其具体应用包括半导体的干蚀刻,CVD系统的清洗,火箭燃料的氧化剂等。然而,由于NF3等含氟气体具有毒性和高度的化学稳定性,如果排放到大气中,很可能像二氧化碳气体和氟利昂气体一样,对全球变暖造成深远的不利影响。研究组利用氟化物气体与一种金属氯化物和氧化物发生化学反应的原理,开发了将半导体制造工厂排放的废气中的氟化物气体直接转化为无害物质的新技术。实验结果表明,与燃烧处理相比,在80 ~ 400℃的较低温度下可以进行化学反应。其他有利的特点是可以在低温常压下进行连续处理,并且该工艺结构紧凑,易于控制,运行成本低,可安全操作。
英文摘要
A new technology to make fluoride and chloride gases such as NF_3 CF_4 and BC1_3 harmless has been developed and a new concept on the removing of toxic gas to be used in the advanced process of materials has been established. The fluoride gases are toxic and special type of gases to be used in the process of manufacturing semiconductors and their specific applications include the dry etching of semiconductors, cleaning of CVD systems, the oxidation agent for rocket fuel etc. As a fluoride gas like NF3 is, however, toxic and highly chemically stable, if discharged into the atmosphere, it is liable to cause far-reaching adverse influences on global warning in the same manner as carbon dioxide gas and freon gas.The research team utilized the chemical reaction between fluoride gas and a metal chlorides and oxides, and established a new technology to make fluoride gas contained in the exhaust gas from semiconductor manufacturing plants convert directly into a harmless substance. Experimental results verify that the chemical reactions can be take place at substantially lower temperature of 80-400℃ as compared with the combustion treatment method. The other favorable characteristics are that continuous treatment is possible at a low temperature under atmospheric pressure, and that the process is compact easily controllable and safely operable at low running cost.
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H. yamamoto, T. Yatsuhashi, A. Kushida N. Murayama and J.Shibata: "Harmless Treatment of Global Warming Gases Exsorsted from Manufacturing Process of Semiconductors"Thermophysical Properties. Vol.22. 64-66 (2001)
H. yamamoto、T. Yatsuhashi、A. Kushida N. Murayama 和 J. Shibata:“半导体制造过程中排出的全球变暖气体的无害化处理”热物理性质。
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H. Yamamoto and J. Shibata: "Disposal of Waste Fluoride and Chloride Gases in the Manufacturing Process of Semiconductors"proceedings of Second International Conference on Material Processing for Properties (PMP2000). Vol.1. 685-688 (2000)
H. Yamamoto 和 J. Shibata:“半导体制造过程中废弃氟化物和氯化物气体的处理”第二届国际材料加工性能会议 (PMP2000) 论文集。
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J. Shibata and H. Yamamoto: "Harmless Disposal of Fluoride and Chioride Material Gases"Kagakusouchi. Vol.43, No.7. 49-55 (2001)
J. Shibata 和 H. Yamamoto:“氟化物和氯化物材料气体的无害化处置”Kagakusouchi。
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芝田隼次,山本秀樹: "特殊材料ガスの無害化処理"ケミカルエンジニアリング. 45巻. 35-41 (2000)
Junji Shibata,Hideki Yamamoto:“特殊材料气体的无毒处理”化学工程卷 45. 35-41 (2000)。
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Hideki Yamamoto and Junji Shibata: "Disposal of Waste Fluoride and Chloride Gases in the Manufacturing Process of Semiconductors"Proceedings of Second International Conference on Material Processing for Properties (PMP2000). Vol.1. 685-688 (2000)
Hideki Yamamoto 和 Junji Shibata:“半导体制造过程中废弃氟化物和氯化物气体的处理”第二届国际材料加工性能会议 (PMP2000) 论文集。
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共 13 条
Separation and recovery of rare metals from secondary buttery using mineral processing and refining technologies
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批准号:24360376
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.74万
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财政年份:2012
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负责人:SHIBATA Junji
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依托单位:
Development of Recycling Technology of Unused Wastes
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批准号:17206091
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$31.2万
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财政年份:2005
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负责人:SHIBATA Junji
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依托单位:
A STUDY ON CONTACT MECHANISM AND CMP ACTION OF POLISHING PAD
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批准号:17560104
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.24万
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财政年份:2005
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负责人:SHIBATA Junji
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依托单位:
Application of Solvent Extraction to the Treatment of Waste Acid Mixture discharged from IT relating Industry
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批准号:15360485
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.42万
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财政年份:2003
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负责人:SHIBATA Junji
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依托单位:
A BASIC STUDY ON METAL CMP MECHANISM AND A TRIAL FOR PRODUCING CMP SLURRY BY SOL-GEL METHOD
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批准号:15560101
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.37万
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财政年份:2003
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负责人:SHIBATA Junji
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依托单位:
PRECISION FINISHING OF MONO-CRYSTAL SILICON BALLS FOR SPHERICAL SEMI-CONDUCTORS
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批准号:13650130
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.56万
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财政年份:2001
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负责人:SHIBATA Junji
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依托单位:
Development of Analysis System of Rheology Characteristics for Slurry containing Fine Powders
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批准号:10650921
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.6万
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财政年份:1998
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负责人:SHIBATA Junji
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依托单位:
Production of Complex Fine Powders Using Solvent Extraction and Evaluation of the Powders
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批准号:08305042
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$4.03万
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财政年份:1996
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负责人:SHIBATA Junji
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依托单位:
Development of continuous separation system for rare earth with solvent impregnated resin
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批准号:06555315
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$5.18万
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财政年份:1994
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负责人:SHIBATA Junji
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依托单位:
STUDIES OF THE SEPARATION OF RARE EARTHS WITH SOLVENT IMPREGNATED RESIN
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批准号:04650591
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$0.77万
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财政年份:1992
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负责人:SHIBATA Junji
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依托单位:
Deformation behavior of materials under sub-mum (nano) interference
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批准号:03650113
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.28万
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财政年份:1991
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负责人:SHIBATA Junji
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依托单位:
Precision Lapping of Substrata Such As Aluminum, etc. by Fixed Abrasives
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批准号:63550107
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.34万
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财政年份:1988
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负责人:SHIBATA Junji
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依托单位:
Flat Honing of New Ceramics with Diamond Lapping Film
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批准号:61550100
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.02万
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财政年份:1986
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负责人:SHIBATA Junji
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依托单位: