Establishment of novel materials surface treatment/modification technology with using supercritical fluid plasma beam
Establishment of novel materials surface treatment/modification technology with using supercritical fluid plasma beam
批准号:
15360380
负责人:
TERASHIMA Kazuo
金额:
$9.86万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2004
中文摘要
(1)超临界流体介质阻挡放电微等离子体处理装置研制研制了一种超临界流体介质阻挡放电(DBD)微等离子体处理装置。利用该装置,我们将光学发射光谱(OES)应用于高压CO_2环境下直至超临界条件下产生的等离子体。采用介质阻挡放电(DBD)和直流放电两种等离子体。在超临界条件下,C_2分子和O原子在两种放电方式下的光谱都很明显。在2.0 MPa下,DBD中C_2的旋转温度约为4000 K。(2)超临界流体等离子体在新型材料表面处理与制造中的应用我们已经将电弧型和DBD型两种超临界流体等离子体应用于材料表面处理与制造。它们对工艺参数(如温度、压力和频率)对合成材料的依赖性已经得到了深入的研究。通过这些实验,我们成功地在400K左右以scCO_2为原料合成了碳纳米管和碳纳米洋葱等碳纳米结构材料及其薄膜。此外,在400K左右也成功沉积了金属膜。(3)激光诱导超临界流体等离子体的产生成功地实现了激光诱导超临界流体等离子体(scCO_2和scH_2O)的产生。此外,还观察到受激拉曼散射现象。
英文摘要
(1)Development of a Supercritical Fluid Dielectric Barrier Discharge Microplasma Processing DeviceWe have developed a supercritical fluid dielectric barrier discharge (DBD) microplasma processing device. Using this device, we applied optical emission spectroscopy (OES) to plasmas generated in high-pressure CO_2 environments up to supercritical condition. Two types of plasmas, namely, dielectric barrier discharge (DBD) and DC discharge were employed. Up to supercritical conditions, the spectra of C_2 molecule and atomic O were remarkable by optical emission spectroscopy of both types of discharge. Rotational temperature of C_2 was estimated as approximately 4000 K in DBD at 2.0 MPa.(2)Application of supercritical fluid plasmas to novel materials surface treatment & fabricationWe have applied two types of supercritical fluid plasmas, namely arc type & DBD type, to materials surface treatment and fabrication. Their dependences of process parameters, such as temperature, pressure, and frequency, on synthesized materials have been intensively investigated. Through these experiments, we have succeeded in carbon nanostructured materials, such as carbon nanotube and carbon nano-onion, synthesis and their thin films from scCO_2 as raw-materials at around 400K. In addition, metal film deposition has been also succeeded at around 400K.(3)Generation of Laser-induced supercritical fluid plasmaThe generation of laser-induced supercritical fluid plasma (for scCO_2 and scH_2O) has been successfully achieved. Moreover, SRS(Stimulated Raman Scattering) phenonema has been observed.
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材料デバイスプロセスへの展開
材料器件工艺开发
DOI:
--
发表时间:
2004
期刊:
O plus E 26
影响因子:
--
作者:
[苫居高明, 伊藤剛仁, 寺嶋和夫]
通讯作者:
寺嶋和夫
T.Ito, H.Fujiwara, K.Terashima: "Decreace of breakdown voltages for micrometer-scale-gap electrodes for carbon dioxide near the critical point : temperature and pressure dependence"J.Appl.Phys.. 94・8. 5411-5413 (2003)
T.Ito、H.Fujiwara、K.Terashima:“临界点附近二氧化碳微米级间隙电极的击穿电压降低:温度和压力依赖性”J.Appl.Phys.. 94・8。 5413 (2003)
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
マイクロ・ナノ領域でのプラズマの生成法
微纳区域等离子体产生方法
DOI:
--
发表时间:
2005
期刊:
静電気学会誌 29(印刷中)
影响因子:
--
作者:
[寺嶋和夫, 苫居高明, 金 載浩]
通讯作者:
金 載浩
Carbon nanotube and nanopolyhedron syntheses by a discharge under a supercritical fluid environment
超临界流体环境下放电合成碳纳米管和纳米多面体
DOI:
--
发表时间:
2004
期刊:
J.Mater.Chem. 14
影响因子:
--
作者:
[T.Ito, K.Katahira, Y.Shimizu, T.Sasaki, N.Koshizaki, K.Terashima]
通讯作者:
K.Terashima
Decrease of breakdown voltages for micrometer-scale gap electrodes for carbon dioxide near the critical point : Temperature and pressure dependence
二氧化碳微米级间隙电极在临界点附近击穿电压的降低:温度和压力依赖性
DOI:
--
发表时间:
2003
期刊:
J.Appl.Phys. 94
影响因子:
--
作者:
[T.Ito, H.Fujiwara, K.Terashima]
通讯作者:
K.Terashima
共 8 条
Creation of cryoplasma materials process science
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批准号:24246120
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项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$29.7万
-
财政年份:2012
-
负责人:TERASHIMA Kazuo
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依托单位:
Development of novel materials surface modification/fabricationTechnology with a use of supercritical fluid ion beam
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批准号:24656436
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
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财政年份:2012
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负责人:TERASHIMA Kazuo
-
依托单位:
Generation of ccryoplasma and its application to materials processing
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批准号:21360356
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.56万
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财政年份:2009
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负责人:TERASHIMA Kazuo
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依托单位:
Creation of solution plasma controlled in nano space and Its application to materials processing
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批准号:19360326
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$13.06万
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财政年份:2007
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负责人:TERASHIMA Kazuo
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依托单位:
Establishment of innovational materials surface treatment / modification technology with using supercritical cluster plasma fluid
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批准号:17360349
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.79万
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财政年份:2005
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负责人:TERASHIMA Kazuo
-
依托单位:
Application of microplasma to materials device process
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批准号:15075202
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$53.38万
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财政年份:2003
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负责人:TERASHIMA Kazuo
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依托单位:
Integration of ultra-small plasma material processing device - fabrication of microscale plasma chip
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批准号:12555185
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.58万
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财政年份:2000
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负责人:TERASHIMA Kazuo
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依托单位:
Establishment of novel microscale surface treatment/processing technology with ultra-small plasma beam
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批准号:12450288
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.6万
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财政年份:2000
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负责人:TERASHIMA Kazuo
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依托单位:
Development of SPM operational in a plasma environmental and its application to the nano-scopic structural study of solid-plasma interface
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批准号:10450231
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.7万
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财政年份:1998
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负责人:TERASHIMA Kazuo
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依托单位:
Development of STM operational in a plasma and its application to a control of plasma materials surface processing on an atomic scale
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批准号:09555215
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$6.14万
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财政年份:1997
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负责人:TERASHIMA Kazuo
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依托单位:
Developmene of micro/nanoscale plasma generator and its application to materialn process
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批准号:07555513
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$2.43万
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财政年份:1995
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负责人:TERASHIMA Kazuo
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依托单位:
Development of nano-scale processing with the tunneling electrons from a scanning tunneling microscope (STM) under atmospheric or reduced pressure
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批准号:03650539
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.41万
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财政年份:1991
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负责人:TERASHIMA Kazuo
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依托单位:
海外基金