Research on fundamental technologies for processing of electronic materials by synchrotron light-excited process

以同步加速器光激发蚀刻ZnTe作为电子材料为例进行了论证。在SF_6气体的情况下，ZnTe没有被蚀刻，而是在ZnTe表面沉积了含氟材料（如ZnF2）的薄膜。另一方面，在负样品偏压下，使用Ar气体可以有效地蚀刻ZnTe。通过放置镍网得到的蚀刻图案表明，只有辐照区域被蚀刻。研究了腐蚀机理。为了利用佐贺县政府建造的同步加速器光源，设计并建造了一条用于开发先进材料和加工的新光束线。此外，电子材料的加工包含外延生长，掺杂，蚀刻和退火过程已经在我们的实验室进行了作为同步加速器光加工的初步实验。

Synchrotron light-excited etching of ZnTe as an example of electronic material has been demonstrated. In the case of SF_6 gas, the ZnTe was not etched but thin film of a fluorine containing material, e.g. ZnF2, was deposited on the surface of ZnTe. On the other hand, ZnTe was etched effectively by using Ar gas under the negative sample bias to the sample. The etched pattern obtained by placing a Ni mesh showed that only the irradiated area was etched. The etching mechanism has been investigated. A new beamline for the development of advanced materials and processing has been designed and constructed in order to utilize synchrotron light source built by Saga Prefectural Government. Furthermore, the processing of electronic materials containing epitaxial growth, doping, etching and annealing procedures has been carried out in our laboratory as prelimary experiments for the processing using synchrotron light.