Research on preparations of precise-resistance thin-film materials having higher resistivity with zero-temperature dependence

在本研究中，对新型薄膜耐药性材料的准备，其中耐药性的小温度系数（TCR）和高耐药性与那些普通材料进行了调查。对ZnO电子性能的氮、氧和底层温度的初步影响：在薄电影中进行了调查。当In_2O_3添加到ZnO时，TCR显示最小值为9%。由于N_2部分压力的抵抗力减少了，但当N_2部分压力的抵抗力增加了N_2部分压力的抵抗力增加了，当它达到20%以上时。运营商concentration of the ZnO based films became high as 10^<20>cm^\-3&gt; when Al_2 O_3 was added to ZnO at 2 wt%。薄膜的耐药性从10^&lt;-3&gt;增加到1 Ω·厘米，将铜添加到薄膜中，其TCR在100 ppm/℃中降低，ZnO薄膜的耐药性从10^&lt;-1&gt;增加到10^3 Ω·厘米，将MgO混合到薄膜中。Degenerated Al_2O_3添加的ZnMgO薄膜保持高载体集中，当大厅的流动性极低，其抵抗力增加到约3×10^&lt;-3&gt; Ω·cm。他们的TCR显示在50 ppm/℃。当物质从蓝宝石单晶体到石英玻璃时，抵抗力显示出了很高的价值。

In this research, preparations of novel thin film resistance materials which have small temperature coefficient of resistance (TCR) and higher resistivities compared with those of the usual materials were investigated. Firstly, effects of nitrogen, oxygen and substrate temperatures on electrical properties of ZnO : In thin films were investigated. The TCR showed minimum value when In_2O_3 was added to ZnO at 9 wt%. The resistivities decreased with increasing of N_2 partial pressure, whereas the resistivities increased with the increasing of N_2 partial pressure when it was over 20 %. Carrier concentration of the ZnO based films became high as 10^<20>cm^<-3> when Al_2O_3 was added to ZnO at 2 wt%. Resistivity of the films increase from 10^<-3> to 1 Ω・cm by adding Cu to the films, and their TCR became low within 100 ppm/℃ Moreover, resistivity of the ZnO films increased from 10^<-1> to 10^3 Ω・cm by mixing MgO to the films. Degenerated Al_2O_3 added ZnMgO films kept high carrier concentration, whereas Hall mobility of them was extremely low and their resistivity increased to about 3×10^<-3> Ω・cm. Their TCR showed within 50 ppm/℃. The resistivities showed much higher value when the substrate material was changed from sapphire single crystals to quartz glasses.