"Basic study on very-fast GaInAs transistor and integrated long-wavelength laser"

1.5 <微b> m GaInAsP激光二极管和GaInAs晶体管的单片集成将在光通信和计算机技术领域带来显著的进步。为了为上述进展奠定基础，我们研究了高速GaInAs晶体管和低阈值电流激光二极管，它们都是由有机金属气相外延（OMVPE）在InP衬底上生长的外延层组成的。因此，这些设备已成为单片集成彼此。我们取得了以下成绩。(1)首次采用OMVPE制备了GaInAs mosfet，并使其工作。(2)利用波性电子控制电流，实现亚皮秒级的开关时间，是超高速晶体管的新原理。(3)首次测得OMVPE法生长的GaInAs的平均自由程长度大于250nm。结果表明，OMVPE生长的GaInAs晶体是制备上述新型晶体管最合适的材料。(4)优化了OMVPE生长条件，使激光阈值电流密度低至1KA/ <cm^2>。(5)随着OMVPE技术在器件制造中的应用，埋入工艺得到了发展，实现了所有OMVPE加工的埋入异质连续波激光器。(6)首次在GaInAsP量子阱结构中实现了激光作用。(7)建立了相移分布反馈激光器的设计理论，该激光器的实现在之前的研究中首次被证明。未来，我们将继续利用OMVPE技术对这些源于本项目的新型晶体管进行研究。

A monolithic integration of 1.5 <micro> m GaInAsP laser diodes and GaInAs transistors may provide remarkable progress in the technical field of optical communications as well as computers. In order to establish the basis for the above progresses, we have studied high- speed GaInAs transistors and low-threshold current laser diodes both of which are consisted of epitaxial layers grown by organometallic vapor phase epitaxy (OMVPE) on InP substrates. There fore, these devices have become monolithically integrable to each other. We have achieved the followings.(1)GaInAs MOSFETs, using OMVPE, were fabricated and made to operate for the first time. (2)As a new principle for very-fast transistor, the electrons of wave-nature were used to control the current for the purpose of attaining : subpicosecond switching time. (3)The mean free path length in GaInAs grown by OMVPE method was measured to be more than 250nm for the first time. It was revealed that OMVPE grown GaInAs crystal is the most suitable material for the above new transistors. (4)OMVPE growth conditions were optimized to achieve lasing threshold current densities as low as 1KA/ <cm^2> . (5)As OMVPE techniques for device fabrication, the burying process was developed to attain all OMVPE processed buried-hetero CW laser. (6)Lasing action was realized in GaInAsP quantum-well structures, for the first time. (7)The design-theory was developed for the phase-shift-distributed feedback lasers whose realization was previously demonstrated by us for the first time.In the future, we would continue the researches on these new transistors originated from this project by utilizing OMVPE techniques.