Low Temperature Growth of Semiconductor Sic by Photo-Plasma Double Excitation

采用等离子体辅助化学气相沉积（PCVD）和低压化学气相沉积（LPCVD）技术，在700 ~ 1500^ cc的温度下，用Si_2H_6和C_2H_2在Si衬底上生长了3C-SiC薄膜。单晶SiC薄膜在900°C以上生长。多晶sic薄膜在900℃以下生长。在800℃以下，PCVD的生长速率高于LPCVD。通过测定其生长速率来研究其生长动力学。采用四极质谱（QMS）对源气体的分解过程进行了研究。结果表明，Si_2H_6自由基在800^天边C以下起重要作用。PCVD的生长速率高于LPCVD。在LPCVD中，800^ C以上的活化能为13 Kcal/mol， 800^ C以下的活化能为31 Kcal/mol。在PCVD中，活化能与LPCVD中800^ C以上的活化能相当，且生长速率基本不变。在750 ~ 1000^ cc的温度范围内，无论是否有等离子体辅助，当C_2H_2或H_2流速增加时，其生长速率不变。生长速率与H_2流量无关，表明生长速率的限制过程不是化学物质在in LPCVD中的扩散，反应在低温区为一级反应，在高温区为二级反应，表明与Si_2H_6相关的双分子反应发生在高温区。采用PCVD和LPCVD方法在900^ cc以上的Si（111）衬底上生长单晶SiC薄膜。PCVD的生长速率高于LPCVD。生长动力学从生长速率和质量管理体系考虑。

3C-SiC films were grown on Si substrates by plasma-assisted chemical vapor deposition (PCVD) and low pressure chemical vapor deposition (LPCVD) at 700-1500^ﾟC using Si_2H_6 and C_2H_2. Single crystalline SiC films were grown above 900^ﾟC. Polycrystalline SiCFilms were grown below 900^.C. The growth rate of PCVD was higher than LPCVD below 800^0C. The growth Kinetics was investigated by measuring the growth rate. The decomposition process of source gases was investigated by quadrapole mass spectroscopy (QMS). It was clarified that the radicals produced from Si_2H_6 played an important role below 800^ﾟC.The growth rate in PCVD was higher than LPCVD below 800^ﾟC. In LPCVD, the activation energy was 13 Kcal/mol above 800^ﾟC, and 31 Kcal/mol below 800^ﾟC. In PCVD, the activation energy was equal to the value in LPCVD above 800^ﾟC, and the growth rate was almost constant.The growth rate was constant, even if C_2H_2 or H_2 flow rate increased in the temperature range of 750-1000^ﾟC both with and without plasma-assistance. The fact that the growth rate was independent on H_2 flow rate indicates that the limiting process of the growth rate is not the diffusion of chemical species in In LPCVD, the reaction is first order in low temperature region, and second order in high temperature region, which indicates that bi-molecular reaction related to Si_2H_6 occurs in high temperature region.Single crystalline SiC films were grown on Si (111) substrates above 900^ﾟC by PCVD and LPCVD. The growth rate in PCVD was higher than LPCVD below 800^ﾟC. Growth Kinetics was considered from growth rates and QMS.