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Crystal Growth of Free Standing 3C-SiC Using Air-Bridge Structure

使用气桥结构的独立式 3C-SiC 晶体生长

基本信息

批准号：
15360010
负责人：
NISHINO Shigehiro
金额：
$ 8.38万
依托单位：
Kyoto Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15360010/
关键词：
silicon carbide 3C-SiC cubic SiC heteroepitaxy microchanel epitaxy selective epitaxy vapor phase growth CVD 立法晶SiC ヘテロエピタキシャル成長横方向成長単結晶薄膜成長シリコンカーバイト CVD法

项目摘要

Silicon carbide(SiC) is a promising material for the next generation. Among SiC polytypes, Cubic SiC (3C-SiC) has advanced electrical properties, like high low-field electron mobility and high saturated electron drift velocity. Heteroepitaxial growth of 3C-SiC on Si substrates allows a significant cost advantage in the fabrication of large-diameter wafers. However, the lower quality of this material grown heteroepitaxially on Si has hindered its development. A large number of defects such as misfit dislocations, twins, stacking faults and cracks have been identified at the SiC/Si interface, owning to the mismatches in both the lattice constant and the thermal expansion coefficients between the 3C-SiC films and Si substrates.This study reports on heteroepitaxial growth of 3C-SiC on Si substrate with air-bridge structure in order to reduce the high density of defects and the strain in the 3C-SiC epilayer. It has been necessary to investigate the epitaxial growth close to the 3C-SiC/Si in … More terface. 3C-SiC layer was grown mainly on a (111)-oriented silicon substrate by using Si2(CH3)6 (Hexamathyldisilane : HMDS). The crystallinity and surface morphology of 3C-SiC grown on Si(111) depended on the carbonization process. The diameter of each 3C-SiC island depended on the temperature of CVD growth at an early stage of epitaxial growth of 3C-SiC on Si substrate.Three-dimensional fine was formed by using "micro-channel epitaxy(MCE)", "facet-initiated lateral epitaxial overgrowth(FILEO)", "air-bridged structural growth(ASG)" and "lateral epitaxial overgrowth(LEO)". FILEO, ASG and LEO have the fabrication procedure within two CVD growth steps. The crystallinity of ELO formed in MCE became like polycrystalline without the control of nucleation and growth. In FILEO, triangular pyramid of 3C-SiC was formed by {110} facet, owning to the difference of growth rate along between [110] and [111] direction. The crystallinity of bridged regions above air-gap was improved from Raman spectra, compared with seed regions combined Si substrate in ASG. The crystallinity of ELO regions was inferior to that of seed regions in LEO. This result may be improved by close control of experimental parameters at initial stage of 3C-SiC grown on Si substrates. Less

碳化硅（SiC）是下一代有前途的材料。在SiC多型体中，立方SiC（3C-SiC）具有先进的电学性能，如高的低场电子迁移率和高的饱和电子漂移速度。在Si衬底上异质外延生长3C-SiC在大直径晶片的制造中具有显著的成本优势。然而，这种在Si上异质外延生长的材料的较低质量阻碍了其发展。在SiC/Si界面处发现了大量的缺陷，如失配位错、孪晶、层错和裂纹，由于3C-SiC薄膜与Si衬底之间的晶格常数和热膨胀系数不匹配，导致了3C-SiC薄膜的生长过程中出现了一些问题。桥结构，以降低3C-SiC外延层中的高密度缺陷和应变。因此，有必要研究接近3C-SiC/Si的外延生长。 ...更多信息界面。3C-SiC层主要通过使用Si 2（CH 3）6（六甲基二硅烷：HMDS）在（111）取向的硅衬底上生长。在Si（111）衬底上生长的3C-SiC的结晶度和表面形貌取决于碳化过程。在Si衬底上外延生长3C-SiC的早期阶段，每个3C-SiC岛的直径取决于CVD生长的温度。通过“微通道外延（MCE）”、“小平面引发横向外延过生长（FILEO）”、“空气桥结构生长（ASG）”和“横向外延过生长（LEO）”形成三维精细结构。FILEO、ASG和LEO具有两个CVD生长步骤内的制造过程。在MCE中形成的ELO的结晶性变得像多晶，而不受成核和生长的控制。在FILEO中，由于[110]和[111]方向沿着生长速率的差异，3C-SiC由{110}面形成三棱锥。拉曼谱表明，与晶种区结合硅衬底的ASG相比，气隙上方桥接区的结晶度有所提高。ELO区的结晶度低于LEO中的种子区。在Si衬底上生长3C-SiC的初始阶段，通过严格控制实验参数，可以改善这一结果。少