Development of Nanometer Ion Beam Processing Technology

大阪大学和弗劳恩霍夫研究所的研究人员合作研究了以下离子束过程：高能注入、斜向离子注入、无掩模注入、SIMOX/SOI工艺、软错误抗扰性良好工程、SALICIDE工艺、接触孔形成、金属沉积、蚀刻和原位全真空束处理。利用离子束进行未来离子束处理的局部化分析技术已经开发出来，重点关注以下问题：使用不同类型加速器的不同能量和离子种类的离子探针技术、数据采集系统、RBS图像处理、PIXE、沟道对比度和软错误。微探头测量引起的问题，如束流损坏和烧蚀，已经得到澄清。微探针技术对未来离子束过程的适用性和局限性已经得到了检验和澄清。由Fraunhofer小组开发的过程模拟器，COMPAY(2维)和ICECREM(1维)，已经被验证用于未来的离子束过程。对这两个模拟器进行了改进和扩展，以用于未来的加工。合作开发了一个工艺模拟器，实现了动态离子束混合(即气相沉积过程中的离子束混合)的模拟，使我们能够使用动态离子混合技术设计材料合成。原位全真空工艺避免了半导体样品因暴露在空气中而受到污染，已经通过分子束外延和聚焦离子束掺杂/刻蚀/沉积验证了材料生长。

Following ion beam processes, ranging down to a nanometer scale, have been studied by collaboration of researchers between Osaka University and Fraunhofer Institute ; high energy implantation, oblique ion implantation, maskless implantation, SIMOX/SOI processes, well engineering for soft error immunity, SALICIDE processes, contact hole formation, metal deposition, etching and in situ full vacuum beam processing.Localized analysis techniques using ion beams for future ion beam processing have been developed with emphasis on following issues ; ion microprobe techniques with various energies and ion species using different types of accelerators, data acquisition system, image processing with RBS, PIXE, channeling contrast, and soft errors. Problems arising from microprobe measurements such as beam damage and ablation have been clarified. Applicability and limitation of the microprobe techniques to future ion beam processes have been tasted and clarified.Process simulators developed by the Fraunhofer group, COMPOSITE (2 dimensional) and ICECREM (1 dimensional), have been verified for future ion beam processes. Improvement and extension of these two simulators for future processing have been carried out.A process simulator, realizing the simulation of dynamic ion beam mixing, (i.e,.ion beam mixing during vapor deposition) has, for the first time, developed by the collaboration, which enables us to design material syntesis using dynamic ion mixing techniques.In-situ full vacuum Processing, avoiding semiconductor sample contamination due to exposure in the air, has been verified for material growth using molecular beam epitaxy and doping/etching/deposition using focused ion beams.