X-RAY STRUCTURES OF HETEROEPITAXIAL GROWTHS

1.在GaAs（111）衬底上生长的CaSrF_2晶体的外延结构及其界面结构已被充分表征。研究结果已发表在Surface Science上。本文用X射线驻波技术研究了超薄EuBaCuO和GdBaCuO外延晶体在SrTiO_3（001）表面生长界面的结构。实验结果表明，EuBaCuO和GdBaCuO在SrTiO_3的TiO_2表面上，CuO层和CuO_2层都不是第一生长层。同样，BaO层和稀土层也不是第一生长层。研究结果发表在Physical Review.3上。首次在超真空条件下对Asdeposited Si（111）表面进行了掠角X射线静置实验。结果表明，砷原子取代了顶层硅原子，形成了块状表面。结果表明，As原子占据了高对称位，且无序度很小。该研究已发表在《物理评论》上。利用掠角X射线驻波技术在Si（100）：As表面进行了初步的实验研究.机械化学抛光的硅表面的微观粗糙度已被评估掠角X射线反射率测量。它已被证明，该技术可以定量测定2-5 A rms的粗糙度，而不会损坏样品。本文在《J.Jpn.Appl.Phys.》上发表了一篇原创论文。

1. The structure of epitaxial CaSrF2 crystals grown on GaAs(111) substrates, as well as of their interfaces, have been fully characterized. The results have been published in Surface Science.2. The structure of growth interface of untrathin EuBaCuo and GdBaCuO epitaxial crystals on SrTiO3(001) surface have been investigated using the X-ray standing-wave technique. The experimental data show that for both EuBaCuO and GdBaCuO neither the CuO layr nor CuO2 layr can be the first grown layr on the TiO2 surface of SrTiO3 Similary, neither the BaO layr nor the rare-earth layr can be the first layr on the SrO surface. The results have been published in Physical Review.3. Grazing-angle X-ray standing experiments were performed for the first time on Asdeposited Si(111) surface under ultrahigh vacuum conditions. It has been confirmed that arsenic atoms form a bulklike surface replacing the top-layr Si atoms at the threefold positions. Evidences indicating that the As atoms occupy the high-symmetry sites with little disorder was obtained. The research has been published in Physical Review.4. Preliminary experiments were executed on Si(100) : As surface using the grazing-angle X-ray standing-wave technique.5. Microroughness of mechanochemically polished silicon surfaces has been evaluated by grazing-angle X-ray reflectivity measurements. It has been demonstrated that the technique can quantitatively determine roughnesses of 2-5 A rms without damaging the sample. An original paper was printed in J.Jpn.Appl.Phys.out of the work.