Study on Surface Interaction between Atomic Oxygen and MoS_2 and Ultra Low Friction (ULF) Using Their Recombination PRocesses

原子氧发生器/超高真空色谱仪/Auger发射光谱仪是最近设计和制造的，以及单晶体、分离和有机绑定的MoS_2的摩擦特性。按顺序模拟低地球轨道上的环境，原子氧束的能量和通量设置为5eV和5.5*10^<15>原子/m^2·S。对于MoS_2单片段， Friction Coefficient从初始值0.03到大值，5小时后辐射，Friction Coefficient超过2.0的结果。没有S和Mo Auger峰值从该表面识别，并转移到Ti，哪一种是与MoS_2的复合材料，已检测到。类似的趋势被识别为Sputtered MoS_2，它是由AES和XPS发现的，其中增加的Friction是由MoO_3、MoO_2和MoO_的形成导致的<x2>。Though Organic Binded MoS_2展示了0.05前暴露于原子氧的相对高Friction coefficient，5小时后暴露于原子氧的Friction coefficient在0.1低。对于有机绑定的薄膜， C和O在聚酰胺中可以从S的气体中产生可能的抑制作用。对于有机绑定的MoS_2的氧化层是薄的，因此，与单一晶体和分裂的MoS_2相比，有机绑定的MoS_2可以减少对S的气体的污染，设计一个靠近MoS_2的睡眠，原子氧在分子状态中的重新组合是一种被证明的物质。在这个环境中进行了一次断裂实验，显示了0.01的良好价值。在添加剂中，引入二氧化碳气体增强了超低的Friction，但紫外线的辐射增加了Friction。在AES室检测到SO_3的过程中，激光降解光谱学在原子氧中。它包含了一个超低结构要求S在MoS_2表面上的稳定性和MoS_2晶体表面完整性的中观分析。

The atomic oxygen generator/ultra-high vacuum tribometer/Auger emission spectrometer has newly been designed and manufactured, and tribolocal properties of single crystal, sputtered, and organic binded MoS_2 have been investigated. In order to simulate the environment in low earth orbit, the energy and flux of atomic oxygen beam were set at 5 eV and 5.5*10^<15>atoms/m^2・_S. For MoS_2 singlecrystal, friction coefficient increased from the initial value of 0.03 to larger values, and after 5 hours'irradiation, the friction coefficient over 2.0 resulted. None of S and Mo Auger peaks were identified from that surface, and transfer of Ti, which is the mating material to MoS_2, was detected. Similar tendency was recognized for sputtered MoS_2, and it was found by AES and XPS that the increased friction is caused by the formation of MoO_3, MoO_2, and MoO_<x2>. Though organic binded MoS_2 showed a relatively high friction coefficient of 0.05 before exposure to atomic oxygen, the friction coefficient after 5 hours' exposure to atomic oxygen was low at 0.1. For organic binded films, C and O incorporated in polyamide-imide may have a possible suppressing action from the gasification of S.The oxydized layr for organic binded MoS_2 was thin, so that more stable tribological properties of organic binded MoS_2 than those of single crystal and sputtered MoS_2 can be caused by less gasification of S.By designing a sleeve near the MoS_2 specimen, a recombination of atomic oxygen into molecular state was attempted. Friction experiments at this environment showed a good value of 0.01. In addition, an introduction of CO gas enhanced the ultra low friction, but the irradiation of UV increased the friction. Laser desorption spectroscopy inside the AES chamber detected SO_3 during exposure to atomic oxygen. It was concluded that the ultra low friction requires the stabilization of S on MoS_2 surface and the mesoscopic analysis of surface integrity of MoS_2 crystal.