Advanced Science and Technology for Semiconductor Materials and Devices
Advanced Science and Technology for Semiconductor Materials and Devices
批准号:
06044077
负责人:
KUKIMOTO Hiroshi
金额:
$1.15万
依托单位国家:
日本
项目类别:
Grant-in-Aid for international Scientific Research
财政年份:
1994
资助国家:
日本
项目状态:
已结题
起止时间:
1994 至 --
中文摘要
该项目旨在促进日本和韩国在半导体材料和器件的先进科学和技术领域的合作研究。研究课题是根据过去一年的成果选择的,涵盖各种半导体材料(如,SiGe、GaAsP、ZnCdSe)和相关的量子结构。研究任务分为材料制备、物理评估和器件制造。主要成果和活动概述如下。(1)用HF溶液制备多孔硅的研究表明,多孔硅的孔的尺寸受表面氧化层的强烈影响。(2)本文研究了ECR等离子体化学气相沉积(ECR Plasma CVD)外延Si和SiGe。通过控制直流偏压和优化衬底温度,获得了无位错的高质量外延层。(3)研究了GaAsP/GaP应变量子阱威尔斯的光学性质。在异质界面的带偏移已被确定。(4)研究了ZnSe在超强磁场下的磁光行为。利用极化子效应确定了载流子的有效质量.(1)1994年6月在韩国济州举行了关于半导体材料和器件先进科学和技术的日韩联合研讨会,有8名日本人和大约60名韩国人参加。会上介绍并讨论了共同研究兴趣的专题。(2)1995年2月,日本3名研究人员访问韩国,讨论该项目的成果。(3)1995年3月6日,韩国3名研究人员应邀前往日本编写项目摘要。总之,本项目的目的已经成功地实现,合作研究的努力和相互的学术交流。
英文摘要
The project aims at the promotion of cooperative research efforts between Japan and Korea in the area of advanced science and technology for semiconductor materials and devices. Research subjects were selected based on the achievements of the last year, covering various semiconductor materials (e.g., SiGe, GaAsP,ZnCdSe) and related quantum structures. Tasks of research were divided into materials preparation, physical evaluation, and device fabrication. Main achievements and activities are summarized as follows.1. Achievements(1) A study of preparation of porous Si using HF solution reveals that the dimensions of holes of porous Si were strongly influenced by the surface oxide layr.(2) Epitaxy of Si and SiGe by ECR plasma CVD has been investigated. Dislocation-free high quality epilayrs were obtained by controlling DC bias and optimizing substrate temperatures.(3) Optical properties of GaAsP/GaP strained quantum wells has been studied. Band offsets at the heterointerface has been determined.(4) Magneto-optical behavior of ZnSe under an ultra-high magnetic field has been investigated. Effective mass of carrier has been determined by polaron effect.2. Activities(1) Japan-Korea Joint Symposium on Advanced Science and Technology for Semiconductor Materials and Devices was held in June 1994 at Cheju, Korea with 8 Japanese and around 60 Korean participants. Topics of common research interests were presented and discussed.(2) Japanese 3 investigators visited Korea in February 1995 to discuss the achievements of the project.(3) Korean 3 investigators were invited to Japan in March 1995 6o prepare the summary of the project. Future directions have also been discussed.In summary, the purpose of the project has been successfully accomplished, with cooperative research efforts and mutual academic exchange.
期刊论文(9)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
S.H.Park: "Threshold current density of strained InGaAs/InGaAsP quantum well lasers lattice matched to GaAs" Appl.Phys.Lett.64. 2855-2857 (1994)
S.H.Park:“与 GaAs 晶格匹配的应变 InGaAs/InGaAsP 量子阱激光器的阈值电流密度”Appl.Phys.Lett.64。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
H.Kukimoto: "Doping of wide-gap II-VI compounds for short-wavelength visible light emitting devices" Proc.Int.Conf.on Defects in Semiconductors. 385-390 (1994)
H.Kukimoto:“用于短波长可见光发射器件的宽禁带 II-VI 化合物的掺杂”Proc.Int.Conf.on 半导体缺陷。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
T.W.Kim: "Magnetotransport and electron subband studies of edge delta-doped AlGaAs/GaAs single quantum wells" J.Appl.Phys.76. 2863-2867 (1994)
T.W.Kim:“边缘 δ 掺杂 AlGaAs/GaAs 单量子阱的磁输运和电子子带研究”J.Appl.Phys.76。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
A.Yoshikawa: "Surface reaction mechanism in MOMBE-ALE of ZnSe and CdSe as determined by a new in-situ optical probing method" Appl.Surf.Sci.82/83. 316-321 (1994)
A.Yoshikawa:“通过新的原位光学探测方法确定 MOMBE-ALE 中 ZnSe 和 CdSe 的表面反应机制”Appl.Surf.Sci.82/83。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Z.S.Pio: "Intensity variation of PL in In_xGa_<1-x>As/GaAs multiquantum-well structures" Appl.Phys.Lett.65. 333-335 (1994)
Z.S.Pio:“In_xGa_<1-x>As/GaAs 多量子阱结构中 PL 的强度变化”Appl.Phys.Lett.65。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 7 条
Advanced Science and Technology for Semiconductor Materials and Devices
-
批准号:05044206
-
项目类别:Grant-in-Aid for Overseas Scientific Survey.
-
资助金额:$0.0万
-
财政年份:1993
-
负责人:KUKIMOTO Hiroshi
-
依托单位:
Selective area growth of compound semiconductors induced by electron-beam irradiation
-
批准号:03402023
-
项目类别:Grant-in-Aid for General Scientific Research (A)
-
资助金额:$16.77万
-
财政年份:1991
-
负责人:KUKIMOTO Hiroshi
-
依托单位:
Development of Blue-Emitting EL devices with High Color-Purity and Brightness
-
批准号:01850006
-
项目类别:Grant-in-Aid for Developmental Scientific Research
-
资助金额:$12.93万
-
财政年份:1989
-
负责人:KUKIMOTO Hiroshi
-
依托单位:
海外基金