Ecology and Dynamics of Hydrogen at Semiconductor Surface

由于氢是最简单的元素，所以很难探测到氢原子，特别是当它们位于固体表面时。在目前的条件下，利用几种有限的方法，对表面氢的绝对量、电子态、原子排列等性质进行了零碎的独立研究，并对表面氢的行为进行了推论讨论。本研究的目的是通过对表面氢的深入研究，通过对表面氢的深入研究，阐明半导体表面的生态和动力学。在本研究项目中，我们通过结构分析、化学状态评估和理论计算，结合研究人员的密切联系，通过结构分析、化学态评估和理论计算，研究了表面氢对金属原子和衬底硅原子在金属-硅浅界面结构上原子氢吸附行为的影响。特别值得一提的是，我们研究了原子氢暴露引起的In/Si(111)表面的结构变化，发现衬底Si原子是由氢的吸附引起的特殊结构的自组织，并且强烈依赖于衬底重构。

Since hydrogen is the most simple element, it is difficult to detect hydrogen atoms especially when they reside on solid surfaces. Under the present condition, using several limited methods, several properties of surface hydrogen such as absolute amounts, electronic states, atomic arrangements are independently investigated in a fragmentary manner, and the behavior of surface hydrogen is being discussed under inference. The purpose of this research project is to elucidate the ecology and dynamics at semiconductor surfaces by means of intensive studies on surface hydrogen conducted by researchers who have achievements on specialized experimental methods and theorists.In this research project, with getting in close touch between researchers, we have studied the influence of surface hydrogen on the behaviors of metal atoms and substrate silicon atoms at atomic hydrogen adsorption on the metal-silicon shallow interface structures by means of structure analysis, evaluation of chemical state, and theoretical calculation. The result worthy of special mention was that we have investigated the structural changes of the In/Si (111) surface induced by atomic hydrogen exposure and found that the substrate Si atoms ware self-organized to peculiar structures induced by adsorption of hydrogen with being strongly dependent on the substrate reconstruction.